Abstract:Identifying new two-dimensional intrinsic ferromagnets with high transition temperatures is a key step of improving device performance. Here we used first-principles calculations to demonstrate that the monolayer Janus Mo 2 I 3 Br 3 is an intrinsic ferromagnetic bipolar semiconductor with a large out-of-plane spin orientation. The calculated phonon dispersion and ab initio molecular dynamic simulations indicate the stability dynamically and thermally. Furthermore, we investigated the effect of electrostatic doping or in-plane biaxial strain on the electronic structures and magnetic and optical properties of monolayer Mo 2 I 3 Br 3 . We find that the magnetic anisotropy energy and Curie temperature are enhanced more than 4 and 2 times with the hole doping compared with those in the pristine monolayer Mo 2 I 3 Br 3 , respectively. The calculated electronic structures show that the stable half-metallic states are formed by electron or hole doping due to the strong spin polarization of the electronic states around the Fermi level. Furthermore, the spin orientation in the metallic channel of the doped monolayer Mo 2 I 3 Br 3 can be flipped with the increase of electron doping concentration. In addition, the magnetic anisotropy energy and Curie temperature can also be effectively manipulated by in-plane biaxial strain. The spin polarization of the conduction band minimum can be reversed by the tensile strain of 3% for the monolayer Mo 2 I 3 Br 3 , transforming it into an indirect band gap semiconductor. Finally, the calculated large and tunable optical absorption coefficient indicates that monolayer Mo 2 I 3 Br 3 is a promising candidate for potential optoelectronic applications. Our results may open up more opportunities for few-layer van der Waals crystals in magnetic storage, spintronics, and optoelectronic devices.

Turning non-magnetic two-dimensional molybdenum disulfide into room temperature magnets by the synergistic effect of strain engineering and charge injection

Two-Dimensional Room-Temperature Magnetism in Janus Mn2I3S3 and Cr2I3Se3 Monolayers with Tunable Magnetic Properties by Strain Engineering.

Room temperature photosensitive ferromagnetic semiconductor using MoS2

Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron-doping

Non-stoichiometry induced 2H-1T phase interfaces and room-temperature ferromagnetism in defective molybdenum selenide

Room temperature ferromagnetic semiconductors through metal-semiconductor transition in monolayer MnSe2

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Ultrahigh-temperature Ferromagnetism MoS2 Moire Superlattice/graphene Hybrid Heterostructures

Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin-to- Spin Conversion

Robust room-temperature ferromagnetism induced by defect engineering in monolayer MoS2

Bipolar Ferromagnetic Semiconductors and Doping-Tuned Room-Temperature Half-Metallicity in Monolayer MoX3 (X =cl, Br, I): an HSE06 Study

Fe3GaTe2/MoSe2 Ferromagnet/Semiconductor 2D van der Waals Heterojunction for Room-Temperature Spin-Valve Devices

Ultrahigh-temperature ferromagnetism in MoS 2 Moiré superlattice/graphene hybrid heterostructures

Room-temperature magnetism in two-dimensional metal–organic frameworks enabled by electrostatic gating

Above room-temperature two-dimensional ferromagnetic half-metals in Mn-based Janus magnets

Manipulating the Electronic Structure and Physical Properties in Monolayer Mo2I3Br3via Strain and Doping

Interface-induced enhanced room temperature ferromagnetism in hybrid transition metal dichalcogenides

Manipulating the electronic structure and physical properties in monolayer Mo2I3Br3 via strain and doping

Robust Half-Metallic Magnetism in Two-Dimensional Fe/MoS2

Intrinsic Ferromagnetic Semiconductivity Realized in a New MoS2 Monolayer