Abstract:Two-dimensional (2D) intrinsic ferromagnetic (FM) materials play a crucial role in spintronics. Through a systematic research of the 2H-MoS2 bilayer (BL) with self-intercalation (SI) of Mo atom, we have discovered that SI can introduce a long-range magnetic order, as Mo-SI atoms lose electrons. The MoS2 BLs (MomSn) with self-intercalated Mo (Mo-SI) atoms show antiferromagnetic (AFM) order under a high concentration of Mo-SI atoms, where the direct exchange interaction dominates over the superexchange interaction. MomSn becomes half-metal (HM) with interlayer FM order after Mo's self-intercalation, under lower Mo-SI atom concentrations, independent of the stacking orders. Mo9S16-AA exhibits HM with FM order, with a corresponding Curie temperature (T-c) of 35 K. MomSn-AA and AB stackings with a lower concentration of Mo-SI atoms transform into half semiconductors (HSCs). Moreover, the magnetic anisotropy energies (MAEs) of Mo9S16-AA and AB stackings are -0.080 and -1.06 meV/f.u., suggesting that the magnetic easy axis (EA) of MomSn tends to the [100] direction, regardless of the stacking orders. However, the MAEs of MomSn-AA and AB stackings differ due to variations in the hybridization interaction between Mo's d orbitals. The formation energies of MomSn change with the chemical potential of S (mu(s)) and the concentration of Mo-SI atoms. Furthermore, the formation energy (epsilon(f)) monotonically increases as the concentration of Mo-SI monotonically increases. Additionally, MomSn with Mo-SI atoms could be synthesized under a higher chemical potential of Mo atom (mu(Mo)). The MomSn-AB stackings are always more stable than the AA stackings. Self-intercalated MomSn exhibits good dynamic and thermal stability at 300 and 600 K, respectively. These findings suggest a promising approach to introducing a modulated long-range FM order and electromagnetic properties into 2H-MoS2 and other transition metal dichalcogenides (TMDs).

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