Abstract:Two-dimensional ferromagnets with a long-range ferromagnetic ordering at finite temperature present a bright prospect for potential applications in nanoscale spintronic devices. The tuning of their intrinsic ferromagnetism and Curie temperature is essential for the development of next-generation data storage and spintronic devices. In this work, the electronic structures, ferromagnetism and Curie temperature of two-dimensional MnS2 monolayer are controlled by charge doping and electric field using first principles calculations. The results show that the dynamic and thermal stability of monolayer MnS2 for all of cases can be still maintained. Moreover, there is no existence of phase transition and all MnS2 monolayers at any charge doping concentrations and electric field intensities favor ferromagnetic coupling. For the manipulation of electron doping, the calculated total magnetic moment Mtot of MnS2 monolayer exhibits an increase from 3.112 to 3.491 μB/unitcell. The further analysis indicates that a transition from half-metal to metal occurs by introducing the charge doping and vertical electric field, and the Mn 3d electronic states are major determinant of ferromagnetism. Additionally, the charge doping enables the magnetic anisotropy energy to transform between an in-plane easy axis to the magnetization direction out of the plane. The Curie temperature Tc of MnS2 monolayer can be moderately enhanced above room temperature by hole doping and application of a vertical electric field. Remarkably, the Tc reaches its peak at 767 K under hole doping concentration of -0.8 e. This work enriches the microscopic understanding and supplies a sound theoretical basis for subsequent experimental study.

Room-Temperature Ferromagnetism in Layered Mn-Substituted MoS<sub>2</sub>

Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron-doping

First-principles predictions of room-temperature ferromagnetism in orthorhombic MnX2 (X = O, S) monolayers

Bilayer hexagonal structure MnN2 nanosheet with room-temperature ferromagnetic half-metal behavior and tunable electronic structure

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Magnetic Properties of Mn-doped Monolayer MoS2

The intrinsic ferromagnetism in a MnO2 monolayer

Two-Dimensional Room-Temperature Magnetism in Janus Mn2I3S3 and Cr2I3Se3 Monolayers with Tunable Magnetic Properties by Strain Engineering.

Room temperature ferromagnetic semiconductors through metal-semiconductor transition in monolayer MnSe2

Charge doping and electric field tunable ferromagnetism and Curie temperature in MnS2 monolayer

Above room-temperature two-dimensional ferromagnetic half-metals in Mn-based Janus magnets

Intrinsic Ferromagnetic Semiconductivity Realized in a New MoS2 Monolayer

Layer-Dependent Magnetism in Two-Dimensional Transition-Metal Chalcogenides MnTn + 1 (M = V, Cr, and Mn; T = S, Se, and Te; and N = 2, 3, and 4)

Intrinsic Ferromagnetism in Mn-Substituted Mos2 Nanosheets Achieved by Supercritical Hydrothermal Reaction

Enhanced Room Temperature Magnetoresistance and Cluster Spin Glass Behavior in Mo Doping La0.67Sr0.33MnO3

Robust Half-Metallic Magnetism in Two-Dimensional Fe/MoS2

Intrinsic Multiferroic MnOF Monolayer with Room-Temperature Ferromagnetism

Robust room-temperature ferromagnetism induced by defect engineering in monolayer MoS2

Room-Temperature Ferromagnetism In The Two-Dimensional Layered Cu2mos4 Nanosheets

Room-temperature Half-Metals Induced Via Chemical Surface Modification: 2D Mn2Se2 Monolayer