Intrinsic Multiferroic MnOF Monolayer with Room-Temperature Ferromagnetism

Shaowen Xu,Fanhao Jia,Xing Yu,Shunbo Hu,Heng Gao,Wei Ren
DOI: https://doi.org/10.1016/j.mtphys.2022.100775
IF: 11.021
2022-01-01
Materials Today Physics
Abstract:Two-dimensional (2D) multiferroic materials have generated substantial interest owing to the interplay between various ferroic states and the potential applications in miniaturized electronic devices. Using first-principles calculations, we report a ferromagnetic, ferroelectric, and ferroelastic MnOF monolayer, which is an indirect semiconductor with a band gap of 1.8 eV. The Cuire temperature is predicted to be 420 K based on the Monte Carlo simulation of Heisenberg model. The magnetic easy-axis prefers to align along c-axis. Moreover, it shows excellent ferroelectricity with a switchable spontaneous polarization of 7.5 degrees C/cm(2). Meanwhile, MnOF monolayer also habors ferroealsticity with a large reversible strain of 21.4% and a moderate switching energy barrier, which can effectively switchferroelectric polarization direction. MnOF monolayer thus offers a perfect platform for studying the 2D multiferroic coupling effects.
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