Abstract:The existence of conventional magnetic ions may not be necessary for the magnetism of 2D transition metal dichalcogenides (TMDs), but the local magnetic moment can effectively regulate the magnetism. Recent enhancement approaches for introduction of magnetism into 2D TMDs mainly use element doping, vacancy defects, heterostructures, phase modulation, adsorption, and also electron irradiation induction, O plasma treatment, etc. Two‐dimensional transition metal dichalcogenides (2D TMDs) present promising applications in various fields such as electronics, optoelectronics, memory devices, batteries, superconductors, and hydrogen evolution reactions due to their regulable energy band structures and unique properties. For emerging spintronics applications, materials with excellent room‐temperature ferromagnetism are required. Although most transition metal compounds do not possess room‐temperature ferromagnetism on their own, they are widely modified by researchers using the emerging strategies to engineer or modulate their intrinsic properties. This paper reviews recent enhancement approaches to induce magnetism in 2D TMDs, mainly using doping, vacancy defects, composite of heterostructures, phase modulation, and adsorption, and also by electron irradiation induction, O plasma treatment, etc. On this basis, the produced effects of these methods for the introduction of magnetism into 2D TMDs are compressively summarized and constructively discussed. For perspective, research on magnetic doping techniques for 2D TMDs materials should be directed toward more reliable and efficient directions, such as exploring advanced design strategies to combine dilute magnetic semiconductors, antiferromagnetic semiconductors, and superconductors to develop new types of heterojunctions; and advancing experimentation strategies to fabricate the designed materials and enable their functionalities with simultaneously pursuing the upscalable growth methods for high‐quality monolayers to multilayers.

Layer-Dependent Magnetism in Two-Dimensional Transition-Metal Chalcogenides MnTn + 1 (M = V, Cr, and Mn; T = S, Se, and Te; and N = 2, 3, and 4)

Bilayer hexagonal structure MnN2 nanosheet with room-temperature ferromagnetic half-metal behavior and tunable electronic structure

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Thickness dependent nanoscale magnetism in two-dimensional manganese telluride (MnTe)

Toward 2D Magnets in the (MnBi2 Te4 )(Bi2 Te3 )n Bulk Crystal

Room-Temperature Ferromagnetism in Layered Mn-Substituted MoS<sub>2</sub>

Stable Antiferromagnetic Property and Tunable Electronic Structure of Two-Dimensional MnPX3 (X = S and Se) from Pristine Structure to Janus Phase

Toward 2D Magnets in the (mnbi2te4)(bi2te3)n Bulk Crystal

Insight into Interlayer Magnetic Coupling in 1T-Type Transition Metal Dichalcogenides Based on the Stacking of Nonmagnetic Atoms

2D Materials by Design: Intercalation of Cr or Mn between two VSe2 van der Waals Layers.

Emerging Enhancement and Regulation Strategies for Ferromagnetic 2D Transition Metal Dichalcogenides

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb 2 Te 4

Variation of magnetism in two-dimensional MnS 2 thin films

Recent Developments in Chemical Vapor Deposition of 2D Magnetic Transition Metal Chalcogenides

Electrically tunable magnetism and unique intralayer charge transfer in Janus monolayer MnSSe for spintronics applications

Ferromagnetic Order in 2D Layers of Transition Metal Dichlorides

Two-Dimensional Room-Temperature Magnetism in Janus Mn2I3S3 and Cr2I3Se3 Monolayers with Tunable Magnetic Properties by Strain Engineering.

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb<sub>2</sub>Te<sub>4</sub>

Above room-temperature two-dimensional ferromagnetic half-metals in Mn-based Janus magnets

Layer-Number-Dependent Antiferromagnetic and Ferromagnetic Behavior in MnSb_{2}Te_{4}.