Abstract:Two-dimensional (2D) layered materials have attracted tremendous interest from the perspective of basic physics and technological applications in the last decade. Especially, the artificially assembled van der Waals (vdW) heterostructures and twisted 2D materials bring out fascinating properties, and render promising applications possible by engineering the stacking order. Here, based on first-principles calculations, we explored the interplay between stacking effect and electron-electron correlation effects in the layered vdW material of bulk 1T-NbS2 with a 2D charge density wave (CDW) order. Without considering the Coulomb correlation effects, two energetically favorable out-of-plane stacking configurations are identified: one is a metallic phase with a single-layer stacking pattern, another is a band insulator with a paired-bilayer stacking configuration. Even if the Coulomb correlation effects are taken into account, the two energetic favorable stacking orders are still far more stable than other stacking orders. Furthermore, increasing the Coulomb interactions, the paired-bilayer stacking configuration transforms from nonmagnetic band insulator to antiferromagnetic insulator, while the single-layer stacked 1T-NbS2 undergoes a Slater-Mott metal-insulator transition, which indicates the non-negligible role of electron-electron correlation interactions. In addition, the electronic structure and magnetic ground state change drastically among different stacking configurations, providing a platform to tune the electronic structures and interlayer magnetic interactions. In contrast to the widely accepted scenario of Mott localization as the driving force behind the gap formation in the CDW phase of layered transition-metal dichalcogenides, our results not only highlight the crucial role of stacking order in the electronic structures of 1T-NbS2, but also shed fresh light on the distinct effects of Coulomb interactions on different stacking arrangements.

Insight into Interlayer Magnetic Coupling in 1T-Type Transition Metal Dichalcogenides Based on the Stacking of Nonmagnetic Atoms

Bethe-Slater-curve-like behavior and interlayer spin-exchange coupling mechanisms in two-dimensional magnetic bilayers

Interlayer electronic coupling on demand in a 2D magnetic semiconductor

Stacking Tunable Interlayer Magnetism in Bilayer CrI3

Bethe-Slater-Curve Like Behavior in Double Super-Exchange Governed Two-Dimensional Magnetic Bilayers

Layer-Dependent Magnetism in Two-Dimensional Transition-Metal Chalcogenides MnTn + 1 (M = V, Cr, and Mn; T = S, Se, and Te; and N = 2, 3, and 4)

Stacking-Dependent Interlayer Magnetic Interactions in CrSe 2

Probing Complex Stacking in a Layered Material Via Electron-Nuclear Quadrupolar Coupling

Optically Probing the Asymmetric Interlayer Coupling in Rhombohedral-Stacked MoS2 Bilayer

Tunable interlayer magnetism and band topology in van der Waals heterostructures of MnBi2Te4-family materials

Tunable magnetism in bilayer transition metal dichalcogenides

Tunable interlayer magnetism and band topology in van der Waals heterostructures of Mn Bi 2 Te 4 -family materials

Enhanced magnetoelectric coupling in two-dimensional hybrid multiferroic heterostructures

Interlayer coupling rotatable magnetic easy-axis in MnSe2 mono- and bi-layers

Coexisting Magnetism, Ferroelectric, and Ferrovalley Multiferroic in Stacking-Dependent Two-Dimensional Materials

Interlayer excitons in double-layer transition metal dichalcogenides quantum dots

2D Materials by Design: Intercalation of Cr or Mn between two VSe2 van der Waals Layers.

Interlayer Coupling: An Additional Degree of Freedom in Two-Dimensional Materials

Evolution of interlayer coupling in twisted molybdenum disulfide bilayers

Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides

Stacking order and Coulomb correlation effect in the layered charge density wave phase of 1 T − Nb S 2