Abstract:Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections in the effective metallic regime above the critical density of the so-called two-dimensional metal-insulator transition (2D MIT). The goal is to look for the effect of logarithmic insulating localization correction to the metallic temperature dependence in the 2D conductivity so as to distinguish between the 2D MIT being a true quantum phase transition versus being a finite-temperature crossover. We use the Boltzmann theory of resistivity including the temperature dependent screening effect on charged impurities in the system to fit the data. We analyze weak perpendicluar field magnetoresistance data taken in the vicinity of the transition and show that they are consistent with weak localization behavior in the strongly disordered regime $k_F\ell\gtrsim1$. Therefore we supplement the Botzmann transport theory with a logarithmic in temperature quantum weak localization correction and analyze the competition of the insulating temperature dependence of this correction with the metallic temperature dependence of the Boltzmann conductivity. Using this minimal theoretical model we find that the logarithmic insulating correction is masked by the metallic temperature dependence of the Botzmann resistivity and therefore the insulating $\log T$ behavior may be apparent only at very low temperatures which are often beyond the range of temperatures accessible experimentally. Analyzing the low-$T$ experimental Si MOSFET transport data we identify signatures of the putative insulating behavior at low temperature and density in the effective metallic phase.

Weak Field Hall Resistance and Effective Carrier Density Through Metal-Insulator Transition in Si-MOS Structures

Critical Behavior of a Strongly Disordered 2D Electron System: the Cases of Long-Range and Screened Coulomb Interactions

Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Signatures of localization in the effective metallic regime of high mobility Si MOSFETs

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Non-Hermitian effect to the ballistic transport and quantized Hall conductivity in 2H-MoS$_{2}$

Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

Hall Coefficient of a Dilute 2D Electron System in Parallel Magnetic Field

Investigations on unconventional aspects in the quantum Hall regime of narrow gate defined channels

Electronic transport in two dimensional Si:P $δ$-doped layers

Effective Mobilities in Pseudomorphic Si/Sige/Si P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Thin Silicon Capping Layers

Sums of powers of consecutive q-integers

Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors

Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior

Theoretical Study of Electronic Transport in Two-Dimensional Transition Metal Dichalcogenides: Effects of the Dielectric Environment

The energy scale behind the metallic behaviors in low-density Si-MOSFETs

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

Temperature-Dependent Transport In A Sixfold Degenerate Two-Dimensional Electron System On A H-Si(111) Surface