Abstract:Low-disorder and high-mobility two-dimensional (2D) electron (or hole) systems confined in semiconductor heterostructures undergo an apparent metal-insulator transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. The goal of the current work is to obtain the critical density (nc) for the 2D MIT with the system being an effective metal (Anderson insulator) for density n above (below) nc. We study the 2D MIT phenomenon theoretically as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, kFl=1, where kF(n) is the 2D Fermi wave vector and l(n) is the disorder-limited quantum mean free path on the metallic side. Calculating the quantum mean free path in the effective metallic phase from a realistic Boltzmann transport theory including disorder scattering effects, we solve the integral equation (with l depending on n through multidimensional integrals) defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density nc as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the critical density is the density dependence of the screened Coulomb disorder. Our calculated results for the crossover critical density nc appear to be in qualitative and semiquantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We also compare the calculated critical density obtained from the Ioffe-Regel criterion with that obtained from a classical percolation theory, concluding that experiments support the Ioffe-Regel criterion for the 2D MIT crossover phenomena.

Critical Behavior of a Strongly Disordered 2D Electron System: the Cases of Long-Range and Screened Coulomb Interactions

Conductance Noise in an Out-of-equilibrium Two-Dimensional Electron System

Scale-dependent theory of the disordered electron liquid

First Order Metal-Insulator Transition in Two-Dimensional Disordered Systems

Conductivity of two-dimensional narrow gap semiconductors subjected to strong Coulomb disorder

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Scaling Behavior of the Metal-Insulator Transition in One-Dimensional Disordered Systems with Long-Range Hopping

The 2D metal-insulator transition as a strong localization induced crossover phenomenon

Critical Behavior and Extended States in 2D and 3D Systems with Gas-like Disorder

One-dimensional extended states in partially disordered planar systems

Two-dimensional metal-insulator transition as a strong localization induced crossover phenomenon

The density and disorder tuned superconductor-metal transition in two dimensions

Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems

Screening and transport in 2D semiconductor systems at low temperatures

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Metal-insulator transition in two-dimensional systems with long-range correlated disorder

Metal-insulator transition in a strongly-correlated two-dimensional electron system

Metal-insulator transition and low-density phases in a strongly-interacting two-dimensional electron system

The relative importance of electron-electron interactions compared to disorder in the two-dimensional "metallic" state

Critical parameters for the one-dimensional systems with long-range correlated disorder

Metal-insulator transition in 2D: resistance in the critical region