Conductance Noise in an Out-of-equilibrium Two-Dimensional Electron System

Ping V. Lin,Xiaoyan Shi,J. Jaroszynski,Dragana Popovic
DOI: https://doi.org/10.1103/physrevb.86.155135
2012-01-01
Abstract:A study of the conductance noise in a two-dimensional electron system (2DES) in Si at low temperatures (T) reveals the onset of large, non-Gaussian noise after cooling from an equilibrium state at a high T with a fixed carrier density n(s). This behavior, which signifies the falling out of equilibrium of the 2DES as T -> 0, is observed for n(s) < n(g) (n(g) denotes the glass transition density). A protocol where density is changed by a small value Delta n(s) at low T produces the same results for the noise power spectra. However, a detailed analysis of the non-Gaussian probability density functions (PDFs) of the fluctuations reveals that Delta n(s) has a qualitatively different and more dramatic effect than Delta T, suggesting that Delta n(s) induces strong changes in the free energy landscape of the system as a result of Coulomb interactions. The results from a third, waiting-time (t(w)) protocol, where n(s) is changed temporarily during t(w) by a large amount, demonstrate that non-Gaussian PDFs exhibit history dependence and an evolution toward a Gaussian distribution as the system ages and slowly approaches equilibrium. By calculating the power spectra and higher-order statistics for the noise measured over a wide range of the applied voltage bias, it is established that the non-Gaussian noise is observed in the regime of Ohmic or linear response, i.e., that it is not caused by the applied bias.
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