Sums of powers of consecutive q-integers

Taekyun Kim

DOI: https://doi.org/10.48550/arXiv.math/0501531

2005-01-29

Abstract:We give the q-analogue of the sums of the n-th powers of positive integers up to k-1.

Number Theory

What problem does this paper attempt to address?

Critical Behavior of a Strongly Disordered 2D Electron System: the Cases of Long-Range and Screened Coulomb Interactions

Ping V. Lin,Dragana Popovic

DOI: https://doi.org/10.1103/physrevlett.114.166401

IF: 8.6

2015-01-01

Physical Review Letters

Abstract:A study of the temperature (T) and density (ns) dependence of conductivity σ(ns,T) of a highly disordered, two-dimensional (2D) electron system in Si demonstrates scaling behavior consistent with the existence of a metal-insulator transition (MIT). The same critical exponents are found when the Coulomb interaction is screened by the metallic gate and when it is unscreened or long range. The results strongly suggest the existence of a disorder-dominated 2D MIT, which is not directly affected by the range of the Coulomb interactions.
Screening and transport in 2D semiconductor systems at low temperatures

S. Das Sarma,E. H. Hwang

DOI: https://doi.org/10.1038/srep16655

2015-08-06

Abstract:Low temperature carrier transport properties in two-dimensional (2D) semiconductor systems can be theoretically well-understood within a mean-field type RPA-Boltzmann theory as being limited by scattering from screened Coulomb disorder arising from random quenched charged impurities in the environment. In the current work, we derive a number of simple analytical formula, supported by realistic numerical calculations, for the relevant density, mobility, and temperature range where 2D transport should manifest strong intrinsic (i.e., arising purely from electronic effects and not from phonon scattering) metallic temperature dependence in different semiconductor materials arising entirely from the 2D screening properties, thus providing an explanation for why the strong temperature dependence of the 2D resistivity can only be observed in high-quality and low-disorder (i.e., high-mobility) 2D samples and also why some high-quality 2D materials (i.e., n-GaAs) manifest much weaker metallicity than other materials. We also discuss effects of interaction and disorder on the 2D screening properties in this context as well as compare 2D and 3D screening functions to comment why such a strong intrinsic temperature dependence arising from screening cannot occur in 3D metallic carrier transport. Experimentally verifiable predictions are made about the quantitative magnitude of the maximum possible low-temperature metallicity in 2D systems and the scaling behavior of the temperature scale controlling the quantum to classical crossover where the system reverses the sign of the temperature derivative of the 2D resistivity at high temperatures.

Mesoscale and Nanoscale Physics,Disordered Systems and Neural Networks
Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells

Yi Huang,Sankar Das Sarma

DOI: https://doi.org/10.1103/PhysRevB.109.125405

2023-12-13

Abstract:Motivated by recent experiments on Si/SiGe quantum wells with a co-design of high electron mobility and large valley splitting [B. Paquelet Wuetz, et al., Nature Communications 14, 1385 (2023); D. D. Esposti, et al., <a class="link-https" data-arxiv-id="2309.02832" href="https://arxiv.org/abs/2309.02832">arXiv:2309.02832</a>], suitable for a Si-based spin qubit quantum computing platform, we examine the role of disorder by theoretically calculating mobility and quantum mobility from various scattering mechanisms and their dependence on the electron density. At low electron densities $n_e < 4 \times 10^{11}$ cm$^{-2}$, we find that mobility is limited by remote Coulomb impurities in the capping layer, whereas interface roughness becomes the significant limiting factor at higher densities. We also find that alloy disorder scattering is not a limiting mechanism in the reported high-mobility structures. We estimate the critical density of the disorder-driven low-density metal-insulator transition using the Anderson-Ioffe-Regel localization criterion and qualitatively explain the breakdown of the Boltzmann-Born theory at low densities. We also estimate the critical density by considering inhomogeneous density fluctuations induced by long-range Coulomb disorder in the system, and find a larger critical density compared to the one obtained from the Anderson-Ioffe-Regel criterion. For quantum mobility, our calculation suggests that remote and distant background impurities are likely the limiting scattering sources across all density. Future measurements of quantum mobility should provide more information on the distribution of background impurities inside the SiGe barriers. Moreover, we extend our theoretical analysis to the effect of quantum degeneracy on transport properties and predict the mobility and the critical density for the metal-insulator transition in spin-polarized high-mobility structures under an external parallel magnetic field.

Mesoscale and Nanoscale Physics,Disordered Systems and Neural Networks,Materials Science
On the metallic behaviour in dilute two-dimensional systems

A.R. Hamilton,M.Y. Simmons,M. Pepper,D.A. Ritchie

DOI: https://doi.org/10.1103/PhysRevLett.87.126802

2000-03-17

Abstract:We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like behaviour. Firstly the strength of the metallic behaviour is almost independent of the symmetry of the confining potential, and is predominantly determined by the low temperature resistivity (i.e. by k_F*l). Secondly the fractional decrease in conductivity with increasing temperature depends only on T/T_F, independent of the carrier density, in both systems.

Strongly Correlated Electrons
First Order Metal-Insulator Transition in Two-Dimensional Disordered Systems

SJ Xiong,GN Katomeris,SN Evangelou

DOI: https://doi.org/10.1002/(sici)1521-3889(199811)7:5/6<363::aid-andp363>3.0.co;2-5

1998-01-01

Annalen der Physik

Abstract:In the absence of magnetic field or spin‐orbit coupling the one‐parameter scaling theory predicts localization of all states in two‐dimensional (2D) disordered systems, for any amount of disorder. However, a 2D metallic phase has been recently reported in high mobility Si‐MOS and GaAs‐based materials without magnetic field. We study numerically a recently proposed 2D model which consists of a compactly coupled pure‐random plane structure. This allows to obtain exactly a continuum of one‐dimensional ballistic extended states which can lead to a marginal metallic phase of finite conductivity σ0 = 2e2/h, in a wide energy range whose boundaries define the mobility edges of a first‐order metal‐insulator transition. We present numerical diagonalization results and the conductivity of the system in perpendicular magnetic field, which verify the above analytical predictions. The model is also discussed in connection to recent experiments.
National High Magnetic Field Laboratory 2016 Annual Research Report: Termination of Two-Dimensional Metallic Conduction Near the Metal-Insulator Transition in Si/SiGe Quantum Wells

Wei Pan,Tzu-Ming Lu,J. Xia,N. Sullivan,S. Huang,Y. Chuang,J. Li,C. Liu,D. Tsui

DOI: https://doi.org/10.2172/1505355

2016-01-01

Abstract:The physical properties of two-dimensional (2D) electrons have been a subject of interest for a long time. Yet after many years of research, the ground states of a 2D electron system (2DES) in the presence of disorder and electron-electron interaction, a realistic situation in experiments, remain an open question. Recent observations of a downturn in conductivity at low temperatures in a Si/SiGe quantum well [1], Si-MOSFETs [2,3], and 2D holes in GaAs [4-6] seem to suggest that disorder plays an important role in the so-called 2D metal-insulator transition (MIT) and at T → 0 2DES may eventually become insulating. In this experiment, we focus on the downturn behavior as a function of spin polarization, which is varied by an in-plane magnetic field.
Signatures of localization in the effective metallic regime of high mobility Si MOSFETs

S. Das Sarma,E. H. Hwang,K. Kechedzhi,L. A. Tracy

DOI: https://doi.org/10.1103/PhysRevB.90.125410

2014-09-16

Abstract:Combining experimental data, numerical transport calculations, and theoretical analysis, we study the temperature-dependent resistivity of high-mobility 2D Si MOSFETs to search for signatures of weak localization induced quantum corrections in the effective metallic regime above the critical density of the so-called two-dimensional metal-insulator transition (2D MIT). The goal is to look for the effect of logarithmic insulating localization correction to the metallic temperature dependence in the 2D conductivity so as to distinguish between the 2D MIT being a true quantum phase transition versus being a finite-temperature crossover. We use the Boltzmann theory of resistivity including the temperature dependent screening effect on charged impurities in the system to fit the data. We analyze weak perpendicluar field magnetoresistance data taken in the vicinity of the transition and show that they are consistent with weak localization behavior in the strongly disordered regime $k_F\ell\gtrsim1$. Therefore we supplement the Botzmann transport theory with a logarithmic in temperature quantum weak localization correction and analyze the competition of the insulating temperature dependence of this correction with the metallic temperature dependence of the Boltzmann conductivity. Using this minimal theoretical model we find that the logarithmic insulating correction is masked by the metallic temperature dependence of the Botzmann resistivity and therefore the insulating $\log T$ behavior may be apparent only at very low temperatures which are often beyond the range of temperatures accessible experimentally. Analyzing the low-$T$ experimental Si MOSFET transport data we identify signatures of the putative insulating behavior at low temperature and density in the effective metallic phase.

Mesoscale and Nanoscale Physics
Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior

S. Das Sarma,E. H. Hwang,Igor Zutic

DOI: https://doi.org/10.1006/spmi.2000.0877

2000-03-28

Abstract:We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing experimental data in several different systems and address the origin of the strong and non-monotonic temperature dependent resistivity.

Strongly Correlated Electrons,Mesoscale and Nanoscale Physics
Low-temperature Linear Transport of Two-Dimensional Massive Dirac Fermions in Silicene: Residual Conductivity and Spin/valley Hall Effects

Yuan Yao,S. Y. Liu,X. L. Lei

DOI: https://doi.org/10.1103/physrevb.91.115411

IF: 3.7

2015-01-01

Physical Review B

Abstract:Considering finite-temperature screened electron-impurity scattering, we present a kinetic equation approach to investigate transport properties of two-dimensional massive fermions in silicene. We find that the longitudinal conductivity is always nonvanishing when chemical potential lies within the energy gap. This residual conductivity arises from interband correlation and strongly depends on strength of electron-impurity scattering. We also clarify that the electron-impurity interaction makes substantial contributions to the spin and valley Hall conductivities, which, however, are almost independent of impurity density. The dependencies of longitudinal conductivity as well as of spin and valley Hall conductivities on chemical potential, temperature, and gap energy are analyzed.
Metallicity and its low temperature behavior in dilute 2D carrier systems

S. Das Sarma,E. H. Hwang

DOI: https://doi.org/10.1103/PhysRevB.69.195305

2004-03-02

Abstract:We theoretically consider the temperature and density dependent transport properties of semiconductor-based 2D carrier systems within the RPA-Boltzmann transport theory, taking into account realistic screened charged impurity scattering in the semiconductor. We derive a leading behavior in the transport property, which is exact in the strict 2D approximation and provides a zeroth order explanation for the strength of metallicity in various 2D carrier systems. By carefully comparing the calculated full nonlinear temperature dependence of electronic resistivity at low temperatures with the corresponding asymptotic analytic form obtained in the $T/T_F \to 0$ limit, both within the RPA screened charged impurity scattering theory, we critically discuss the applicability of the linear temperature dependent correction to the low temperature resistivity in 2D semiconductor structures. We find quite generally that for charged ionized impurity scattering screened by the electronic dielectric function (within RPA or its suitable generalizations including local field corrections), the resistivity obeys the asymptotic linear form only in the extreme low temperature limit of $T/T_F \le 0.05$. We point out the experimental implications of our findings and discuss in the context of the screening theory the relative strengths of metallicity in different 2D systems.

Strongly Correlated Electrons
Metal-insulator transition and low-density phases in a strongly-interacting two-dimensional electron system

A. A. Shashkin,S. V. Kravchenko

DOI: https://doi.org/10.1016/j.aop.2021.168542

2021-04-30

Abstract:We review recent experimental results on the metal-insulator transition and low-density phases in strongly-interacting, low-disordered Si-based two-dimensional electron systems. Special attention is given to the metallic state in ultra-clean SiGe quantum wells and to the evidence for a flat band at the Fermi level and a quantum electron solid.

Strongly Correlated Electrons
The energy scale behind the metallic behaviors in low-density Si-MOSFETs

Geneviève Fleury,Xavier Waintal

DOI: https://doi.org/10.1103/PhysRevB.81.165117

2010-07-30

Abstract:We show that the unexpected metallic behavior (the so-called two-dimensional metal-insulator transition) observed in low-density Silicon metal-oxide-semiconductor field-effect transistors (Si-MOSFETs) is controlled by a unique characteristic energy scale, the polarization energy. On one hand, we perform Quantum Monte Carlo calculations of the energy needed to polarize the two dimensional electron gas at zero temperature, taking into account Coulomb interactions, valley degeneracy and electronic mobility (disorder). On the other hand, we identify the characteristic energy scale controlling the physics in eight different sets of experiments. We find that our {\it ab-initio} polarization energies (obtained without any adjustable parameters) are in perfect agreement with the observed characteristic energies for all available data, both for the magnetic field and temperature dependence of the resistivities. Our results put strong constraints on possible mechanisms responsible for the metallic behavior. In particular, there are strong indications that the system would eventually become insulating at low enough temperature.

Strongly Correlated Electrons,Mesoscale and Nanoscale Physics
The density and disorder tuned superconductor-metal transition in two dimensions

Zhuoyu Chen,Adrian Swartz,Hyeok Yoon,Hisashi Inoue,Tyler A. Merz,Di Lu,Yanwu Xie,Hongtao Yuan,Yasuyuki Hikita,Srinivas Raghu,Harold Y. Hwang

DOI: https://doi.org/10.1038/s41467-018-06444-2

2018-01-01

Abstract:Quantum ground states which arise at atomically controlled oxide interfaces provide an opportunity to address key questions in condensed matter physics, including the nature of two-dimensional (2D) metallic behaviour often observed adjacent to superconductivity. At the superconducting LaAlO3/SrTiO3 interface, a metallic ground state emerges upon the collapse of superconductivity with field-effect gating. Strikingly, such metallicity is accompanied with a pseudogap. Here, we utilize independent control of carrier density and disorder of the interfacial superconductor using dual electrostatic gates, which enables the comprehensive examination of the electronic phase diagram approaching zero temperature. We find that the pseudogap corresponds to precursor pairing, and the onset of long-range phase coherence forms a 2D superconducting dome as a function of the dual gate voltages. The gate-tuned superconductor-metal transitions are driven by macroscopic phase fluctuations of Josephson coupled superconducting puddles.
Metal-insulator transition in 2D: resistance in the critical region

B. L. Altshuler,D. L. Maslov,V. M. Pudalov

DOI: https://doi.org/10.1016/S1386-9477%2800%2900167-3

2000-04-21

Abstract:The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high mobility Si MOSFETs. We analyze concepts and methods used to determine the critical density of electrons at the metal-insulator transition. In particular, we discuss the origin of the temperature dependence of the resistivity and reasons for this dependence to flatten out at some electron density in the vicinity of the metal-insulator transition. This flattening has recently been proposed to indicate a true quantum phase transition. We suggest an alternative interpretation of this result and demonstrate the consistency of our proposition with the experimental data. One of the main questions, which arise in connection with the transition, is whether or not the metallic state is qualitatively distinct from a conventional disordered Fermi liquid. We analyze the arguments in favor of both affirmative and negative answers to this question and conclude that the experimental results accumulated up-to-date do not provide convincing evidence for the new state of matter characterized by a metallic-like residual conductivity. We also discuss in details the measurement and control of the electron temperature; these issues are crucial for interpreting the low-temperature experimental data.

Mesoscale and Nanoscale Physics,Disordered Systems and Neural Networks
The relative importance of electron-electron interactions compared to disorder in the two-dimensional "metallic" state

A. Lewalle,M. Pepper,C. J. B. Ford,E. H. Hwang,S. Das Sarma,D. J. Paul,G. Redmond

DOI: https://doi.org/10.1103/PhysRevB.66.075324

2001-08-15

Abstract:The effect of substrate bias and surface gate voltage on the low temperature resistivity of a Si-MOSFET is studied for electron concentrations where the resistivity increases with increasing temperature. This technique offers two degrees of freedom for controlling the electron concentration and the device mobility, thereby providing a means to evaluate the relative importance of electron-electron interactions and disorder in this so-called ``metallic'' regime. For temperatures well below the Fermi temperature, the data obey a scaling law where the disorder parameter ($k_{\rm{F}}l$), and not the concentration, appears explicitly. This suggests that interactions, although present, do not alter the Fermi-liquid properties of the system fundamentally. Furthermore, this experimental observation is reproduced in results of calculations based on temperature-dependent screening, in the context of Drude-Boltzmann theory.

Mesoscale and Nanoscale Physics
Screening induced temperature dependent transport in 2D graphene

E. H. Hwang,S. Das Sarma

DOI: https://doi.org/10.48550/arXiv.0811.1212

2008-11-07

Mesoscale and Nanoscale Physics

Abstract:We calculate the temperature dependent conductivity of graphene in the presence of randomly distributed Coulomb impurity charges arising from the temperature dependent screening of the Coulomb disorder without any phonons. The purely electronic temperature dependence of our theory arises from two independent mechanisms: the explicit temperature dependence of the finite temperature dielectric function $\epsilon(q,T)$ and the finite temperature energy averaging of the transport scattering time. We find that the calculated temperature dependent conductivity is non-monotonic, decreasing with temperature at low temperatures, and increasing at high temperatures. We provide a critical comparison with the corresponding physics in semiconductor-based parabolic band 2D electron gas systems.
Metal Insulator transition at B=0 in p-SiGe

P.T. Coleridge,R.L. Williams,Y. Feng,P. Zawadzki

DOI: https://doi.org/10.1103/PhysRevB.56.R12764

1997-08-16

Abstract:Observations are reported of a metal-insulator transition in a 2D hole gas in asymmetrically doped strained SiGe quantum wells. The metallic phase, which appears at low temperatures in these high mobility samples, is characterised by a resistivity that decreases exponentially with decreasing temperature. This behaviour, and the duality between resistivity and conductivity on the two sides of the transition, are very similar to that recently reported for high mobility Si-MOSFETs.

Strongly Correlated Electrons
Electronic transport in two dimensional Si:P $δ$-doped layers

E. H. Hwang,S. Das Sarma

DOI: https://doi.org/10.1103/PhysRevB.87.125411

2012-11-09

Abstract:We investigate theoretically 2D electronic transport in Si:P $\delta$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows qualitatively different behavior from that of the well-studied 2D Si-MOSFETs where the carrier density is independent of the impurity density. We find that the density dependent mobility of the Si:P system shows non-monotonic behavior which is exactly opposite of the non-monotonicity observed in Si-MOSFETs --- in the Si:P system the mobility first decreases with increasing density and then it increases slowly with increasing density above a typical density $10^{14}$ cm$^{-2}$ (in contrast to Si MOSFETs where the mobility typically increases with density first and then slowly decreases at high density as surface roughness scattering dominates). In the low density limit (or strong screening limit) mobility decreases inversely with increasing density, but in the high density limit (or weak screening limit) it slowly increases due to the finite width effects of the 2D layer. In the intermediate density regime ($1/a < 2 k_F < q_{TF}$, where $a$, $k_F$, and $q_{TF}$ are the confinement width of the $\delta$-layer, Fermi wave vector, and Thomas-Fermi screening wave vector, respectively) the density dependent mobility is approximately a constant at the minimum value. However, the calculated mean free path increase monotonically with density. We also compare the transport scattering time relevant to the mobility and the single particle relaxation time relevant the quantum level broadening, finding that the transport scattering time could be much larger than the single-particle scattering time unlike in Si MOSFETs where they are approximately equal.

Mesoscale and Nanoscale Physics,Materials Science
The 2D metal-insulator transition as a strong localization induced crossover phenomenon

S. Das Sarma,E. H. Hwang

DOI: https://doi.org/10.48550/arXiv.1401.4762

2014-01-20

Mesoscale and Nanoscale Physics

Abstract:Low-disorder and high-mobility 2D electron (or hole) systems undergo an apparent metal-insulator-transition (MIT) at low temperatures as the carrier density (n) is varied. In some situations, the 2D MIT can be caused at a fixed low carrier density by changing an externally applied in-plane magnetic field parallel to the 2D layer. d\rho/dT changes its sign at some nonuniversal sample-dependent critical carrier density n_c separating an effective 2D metal (d\rho/dT >0) for n>n_c from an effective 2D insulator (d\rho/dT<0) for n<n_c. We study the 2D MIT phenomenon as a possible strong localization induced crossover process controlled by the Ioffe-Regel criterion, k_F l=1. Calculating the quantum mean free path (l) in the effective metallic phase from a realistic transport theory including disorder scattering effects, we solve the integral equation defined by the Ioffe-Regel criterion to obtain the nonuniversal critical density n_c as a function of the applicable physical experimental parameters including disorder strength, in-plane magnetic field, spin and valley degeneracy, background dielectric constant and carrier effective mass, and temperature. The key physics underlying the nonuniversal parameter dependence of the n_c is the temperature and density dependence of the Coulomb disorder. Our calculated results for the crossover n_c appear to be in qualitative and semi-quantitative agreement with the available experimental data in different 2D semiconductor systems lending credence to the possibility that the apparent 2D MIT signals the onset of the strong localization crossover in disordered 2D systems. We provide some results for graphene where a low-temperature 2D MIT becomes possible in the presence of intervalley scattering. We also provide an extensive comparison with the theoretical results obtained on the basis of 2D MIT being considered as a percolation transition.
Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

S. Das Sarma,E. H. Hwang

DOI: https://doi.org/10.1103/PhysRevLett.83.164

1999-06-17

Abstract:We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the $0 - 5$K temperature range, with the low density, low temperature mobility showing a strikingly strong non-monotonic temperature dependence, which may qualitatively explain the recently observed anomalously strong temperature dependent resistivity in low-density, high-mobility MOSFETs.

Disordered Systems and Neural Networks

Sums of powers of consecutive q-integers

Critical Behavior of a Strongly Disordered 2D Electron System: the Cases of Long-Range and Screened Coulomb Interactions

Screening and transport in 2D semiconductor systems at low temperatures

Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells

On the metallic behaviour in dilute two-dimensional systems

First Order Metal-Insulator Transition in Two-Dimensional Disordered Systems

National High Magnetic Field Laboratory 2016 Annual Research Report: Termination of Two-Dimensional Metallic Conduction Near the Metal-Insulator Transition in Si/SiGe Quantum Wells

Signatures of localization in the effective metallic regime of high mobility Si MOSFETs

Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior

Low-temperature Linear Transport of Two-Dimensional Massive Dirac Fermions in Silicene: Residual Conductivity and Spin/valley Hall Effects

Metallicity and its low temperature behavior in dilute 2D carrier systems

Metal-insulator transition and low-density phases in a strongly-interacting two-dimensional electron system

The energy scale behind the metallic behaviors in low-density Si-MOSFETs

The density and disorder tuned superconductor-metal transition in two dimensions

Metal-insulator transition in 2D: resistance in the critical region

The relative importance of electron-electron interactions compared to disorder in the two-dimensional "metallic" state

Screening induced temperature dependent transport in 2D graphene

Metal Insulator transition at B=0 in p-SiGe

Electronic transport in two dimensional Si:P $δ$-doped layers

The 2D metal-insulator transition as a strong localization induced crossover phenomenon

Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers