Temperature-Dependent Transport In A Sixfold Degenerate Two-Dimensional Electron System On A H-Si(111) Surface

Robert N. McFarland,Tomasz M. Kott,Luyan Sun,K. Eng,B. E. Kane
DOI: https://doi.org/10.1103/PhysRevB.80.161310
IF: 3.7
2009-01-01
Physical Review B
Abstract:Low-field magnetotransport measurements on a high-mobility (mu=110,000 cm(2)/Vs) two-dimensional electron system on a H-terminated Si(111) surface reveal a sixfold valley degeneracy with a valley splitting <= 0.1 K. The zero-field resistivity rho(xx) displays strong temperature dependence for 0.07 <= T <= 25 K as predicted for a system with high degeneracy and large mass. We present a method for using the low-field Hall coefficient to probe intervalley momentum transfer (valley drag). The relaxation rate is consistent with Fermi-liquid theory but a small residual drag as T -> 0 remains unexplained.
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