Temperature-dependent Transport in a Sixfold Degenerate 2D Electron System on a H-Si(111) Surface

Robert N. McFarland,Tomasz M. Kott,Luyan Sun,Kevin Eng,B. E. Kane

2009-01-01

Abstract:Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degeneracy with a valley splitting 0 remains unexplained.

What problem does this paper attempt to address?

Temperature-Dependent Transport In A Sixfold Degenerate Two-Dimensional Electron System On A H-Si(111) Surface

Robert N. McFarland,Tomasz M. Kott,Luyan Sun,K. Eng,B. E. Kane

DOI: https://doi.org/10.1103/PhysRevB.80.161310

IF: 3.7

2009-01-01

Physical Review B

Abstract:Low-field magnetotransport measurements on a high-mobility (mu=110,000 cm(2)/Vs) two-dimensional electron system on a H-terminated Si(111) surface reveal a sixfold valley degeneracy with a valley splitting <= 0.1 K. The zero-field resistivity rho(xx) displays strong temperature dependence for 0.07 <= T <= 25 K as predicted for a system with high degeneracy and large mass. We present a method for using the low-field Hall coefficient to probe intervalley momentum transfer (valley drag). The relaxation rate is consistent with Fermi-liquid theory but a small residual drag as T -> 0 remains unexplained.
Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

K. Eng,R. N. McFarland,B. E. Kane

DOI: https://doi.org/10.1103/PhysRevLett.99.016801

2007-05-15

Abstract:We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the six valleys and anisotropy in the resistance. We hypothesize the misorientation of Si surface breaks the valley states into three unequally spaced pairs, but the observation of odd filling factors, is difficult to reconcile with non-interacting electron theory.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons
Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems

X.Y. Chen,W.Z. Shen

DOI: https://doi.org/10.1016/j.surfcoat.2004.10.057

IF: 4.865

2005-01-01

Surface and Coatings Technology

Abstract:In this paper, we review our recent investigation of the electronic transport in hydrogenated nanocrystalline silicon thin film grown on crystalline silicon substrate. The variable magnetic-field Hall measurements have been applied to extract the separated carrier information about the nc-Si:H, c-Si and their interface, where the formation of two-dimensional electron gas is clearly observed. With a decrease in the temperature, the nc-Si:H thin film shows a transition from the extended state to the band-tail state, together with a positive magneto-conductivity at extremely low temperatures. These results reveal the good uniformity of the quantum dots in the nc-Si:H thin film and the electron localization. Furthermore, we have successfully observed clear step-like and spike-like structures for the electrons resonant tunneling through the quasi-2D and 0D states in the I–V curves of the nc-Si:H/c-Si diode under strong electric field at low temperatures.
High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces

Binhui Hu,Tomasz M. Kott,Robert N. McFarland,B. E. Kane

DOI: https://doi.org/10.1063/1.4729584

IF: 4

2012-06-18

Applied Physics Letters

Abstract:We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to 7.5 × 1011 cm−2 are obtained, and the peak hole mobility is about 104 cm2/Vs at 70 mK. The quantum Hall effect is observed. Shubnikov-de Haas oscillations show a beating pattern due to the spin-orbit effects, and the inferred zero-field spin splitting can be tuned by the gate voltage.

physics, applied
Heavy Surface State In A Possible Topological Kondo Insulator: Magnetothermoelectric Transport On The (011) Plane Of Smb6

yongkang luo,hua chen,jianhui dai,zhuan xu,j d thompson

DOI: https://doi.org/10.1103/PhysRevB.91.075130

IF: 3.7

2015-01-01

Physical Review B

Abstract:Motivated by the high sensitivity to Fermi surface topology and scattering mechanisms in magnetothermoelectric transport, we have measured the thermopower and Nernst effect on the (011) plane of the proposed topological Kondo insulator SmB6. These experiments, together with electrical resistivity and Hall effect measurements, suggest that the (011) plane also harbors a metallic surface with an effective mass on the order of 10-10(2) m(0). The surface and bulk conductances are well distinguished in these measurements and are categorized into metallic and nondegenerate semiconducting regimes, respectively. Electronic correlations play an important role in enhancing scattering and also contribute to the heavy surface state.
Thermoelectric Transport of the Half-Filled Lowest Landau Level in a P -Type Ge/SiGe Heterostructure

Xiaoxue Liu,Tzu-Ming Lu,Charles Thomas Harris,Fang-Liang Lu,Chia-You Liu,Jiun-Yun Li,Chee Wee Liu,Rui-Rui Du

DOI: https://doi.org/10.1103/physrevb.101.075304

2020-01-01

Abstract:We investigate the thermoelectric transport properties of the half-filled lowest Landau level v = 1/2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower S-xx(d) at v = 1/2 shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal S-xy(d) of v = 1/2 is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field).
Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC

Mats Hjelm,Kent Bertilsson,Hans-Erik Nilsson

DOI: https://doi.org/10.1016/s0169-4332(01)00502-5

IF: 6.7

2001-12-01

Applied Surface Science

Abstract:The bulk and surface electron transport properties of the 4H and 6H polytypes of silicon carbide (SiC) are studied using a full band Monte Carlo (MC) program. The model for the electrons is based on data from a full potential band structure calculation using the density functional theory (DFT) in the local density approximation (LDA). Both SiC polytypes have anisotropic transport properties, but the degree and characteristics of the anisotropy is different. In this study, we show how the anisotropy affects the bulk mobility for intermediate angles between the crystal axis and the plane perpendicular to it. Simulations of surface transport properties have also been performed for semiconductor-interface angles up to 15° from the plane perpendicular to the c-axis. We present results for surface mobility and velocity as a function of the electric field component parallel to the interface plane. In the surface mobility simulations, a semi-empirical model for the semiconductor–insulator interface has been used, where it is assumed that the electrons are reflected in two perpendicular planes.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Sums of powers of consecutive q-integers

Taekyun Kim

DOI: https://doi.org/10.48550/arXiv.math/0501531

2005-01-29

Abstract:We give the q-analogue of the sums of the n-th powers of positive integers up to k-1.

Number Theory
Interaction-controlled transport in a two-dimensional massless-massive Dirac system: Transition from degenerate to nondegenerate regimes

A. D. Levin,G. M. Gusev,F. G. G. Hernandez,E. B. Olshanetsky,V. M. Kovalev,M. V. Entin,N. N. Mikhailov

DOI: https://doi.org/10.1103/PhysRevResearch.6.023121

2024-05-04

Abstract:The resistivity of two-dimensional (2D) metals generally exhibits insensitivity to electron-electron scattering. However, it's worth noting that Galilean invariance may not hold true in systems characterized by a spectrum containing multiple electronic branches or in scenarios involving electron-hole plasma. In the context of our study, we focus on 2D electrons confined within a triple quantum well (TQW) based on HgTe. This system displays a coexistence of energy bands featuring both linear and parabolic-like spectra at low energy and, therefore, lacks the Galilean invariance. This research employs a combined theoretical and experimental approach to investigate the transport properties of this two-component system across various regimes. By manipulating carrier density and temperature, we tune our system from a fully degenerate regime, where resistance follows a temperature-dependent behavior proportional to $T^2$, to a regime where both types of electrons adhere to Boltzmann statistics. In the non-degenerate regime, electron interactions lead to resistance that is weakly dependent on temperature. Notably, our experimental observations closely align with the theoretical predictions derived in this study. This work establishes the HgTe-based TQW as a promising platform for exploring different interaction dominant scenarios for the massless-massive Dirac system.9 pages, 8 figures

Mesoscale and Nanoscale Physics
Magneto-transport characteristics of two-dimensional electron gas for Si δ -doped InAlAs/InGaAs single quantum well

zhou wenzheng,yao wei,zhu bo,qiu zhijun,guo shaoling,lin tie,cui lijie,gui yongsheng,chu junhao

DOI: https://doi.org/10.3321/j.issn:1000-3290.2006.04.083

IF: 0.906

2006-01-01

Acta Physica Sinica

Abstract:Magneto-transport measurements have been carried out on a Si heavily delta-doped In0.52Al0.48As/In(0.53)G(0.47)As single quantum well in the temperature range between 1.5 and 60 K under magnetic field up to 10 T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for the In0.52Al0.48As/In(0.53)G(0.47)As single quantum well occupied by two subbands, and have obtained the electron concentration, mobility, effective mass and energy levels respectively. The electron concentrations of the two subbands derived from mobility spectrum combined with multi-carrier fitting analysis are well consistent with the result from the SdH oscillation. From fast Fourier transform analysis for d(2)rho/dB(2)-1/B, it is observed that there is a frequency of f(1)-f(2) insensitive to the temperature, besides the frequencies f(1), f(2) for the two subbands and the frequency doubling 2f(1), both dependent on the temperature. This is because That the electrons occupying the two different subbands almost have the same effective mass in the quantum well and the magneto-intersubband scattering between the two subbands is strong.
Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si

A. Yu. Kuntsevich,D. A. Knyazev,V. I. Kozub,V. M. Pudalov,G. Brunhaler,G. Bauer

DOI: https://doi.org/10.48550/arXiv.cond-mat/0504475

2005-04-19

Strongly Correlated Electrons

Abstract:Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be non-monotonic with a maximum at temperatures Tm~0.16Tf. The Rxy(T) variations in the low-temperature domain (T<Tm) agree qualitatively with the semiclassical model, that takes into account a broadening of the Fermi-distribution solely. The semiclassical result considerably exceeds an interaction-induced quantum correction. In the ``high-temperature'' domain (T>Tm), the Rxy(T) dependence can be qualitatively explained in terms of either a semiclassical T-dependence of a transport time, or a thermal activation of carries from a localized band.
Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Tian Shen,Adam T. Neal,Michael L. Bolen,Jiangjiang Gu,Lloyd W. Engel,Michael A. Capano,Peide Ye

DOI: https://doi.org/10.1063/1.3675464

2011-12-20

Abstract:We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k top-gate on the epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic layer deposition process. At low temperatures, the devices demonstrate a strong field effect by the top gate with an on/off ratio of ~7 and an electron mobility up to ~3250 cm^2/Vs. After the observation of the half-integer quantum Hall effect for monolayer epitaxial graphene films, detailed magneto-transport measurements have been carried out including varying densities, temperatures, magnetic fields and currents. We study the width of the distinguishable quantum-Hall plateau to plateau transition (Landau level index n=0 to n=1) as temperature (T) and current are varied. For both gate voltage and magnetic field sweeps and T>10 K the transition width goes as T^{-\kappa} with exponent \kappa ~0.42. This universal scaling exponent agrees well with those found in III-V heterojunctions with short range alloy disorders and in exfoliated graphene.

Mesoscale and Nanoscale Physics
Low-temperature Linear Transport of Two-Dimensional Massive Dirac Fermions in Silicene: Residual Conductivity and Spin/valley Hall Effects

Yuan Yao,S. Y. Liu,X. L. Lei

DOI: https://doi.org/10.1103/physrevb.91.115411

IF: 3.7

2015-01-01

Physical Review B

Abstract:Considering finite-temperature screened electron-impurity scattering, we present a kinetic equation approach to investigate transport properties of two-dimensional massive fermions in silicene. We find that the longitudinal conductivity is always nonvanishing when chemical potential lies within the energy gap. This residual conductivity arises from interband correlation and strongly depends on strength of electron-impurity scattering. We also clarify that the electron-impurity interaction makes substantial contributions to the spin and valley Hall conductivities, which, however, are almost independent of impurity density. The dependencies of longitudinal conductivity as well as of spin and valley Hall conductivities on chemical potential, temperature, and gap energy are analyzed.
Low Temperature Nanoscale Electronic Transport on the MoS_2 surface

R.Thamankar,T. L. Yap,K. E. J. Goh,C. Troadec,C. Joachim

DOI: https://doi.org/10.1063/1.4818998

2013-08-15

Abstract:Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling contact to measure the surface current-voltage characteristics. The separation between the tips is controllably varied and measured using a high resolution scanning electron microscope. The MoS_2 surface shows a surface electronic gap (E_S) of 1.4eV measured at a probe separation of 50nm. Furthermore, the two- probe resistance measured outside the electronic gap shows 2D-like behavior with the two-probe separation.

Mesoscale and Nanoscale Physics,Materials Science
Direct Measurement of Surface Transport on a Bulk Topological Insulator

Lucas Barreto,Lisa Kühnemund,Frederik Edler,Christoph Tegenkamp,Jianli Mi,Martin Bremholm,Bo Brummerstedt Iversen,Christian Frydendahl,Marco Bianchi,Philip Hofmann

DOI: https://doi.org/10.48550/arXiv.1310.0202

2013-10-01

Materials Science

Abstract:Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining bulk conductivity, surface contributions to transport have so-far only been singled out indirectly via quantum oscillations, or for devices based on gated and doped topological insulator thin films, a situation in which the surface carrier mobility could be limited by defect and interface scattering. Here we present the first direct measurement of surface-dominated conduction on an atomically clean surface of bulk-insulating Bi$_2$Te$_2$Se. Using nano-scale four point setups with variable contact distance, we show that the transport at 30 K is two-dimensional rather than three-dimensional and by combining these measurements with angle-resolved photoemission results from the same crystals, we find a surface state mobility of 390(30) cm$^{2}$V$^{-1}$s$^{-1}$ at 30 K at a carrier concentration of 8.71(7)$\times 10^{12}$ cm$^{-2}$.
Signatures of Quantum Transport Through Two-Dimensional Structures With Correlated and Anti-Correlated Interfaces

Tony Low,Davood Ansari

DOI: https://doi.org/10.1103/PhysRevB.78.165301

2008-09-13

Abstract:Electronic transport through a 2D deca-nanometer length channel with correlated and anti-correlated surfaces morphologies is studied using the Keldysh non-equilibrium Green function technique. Due to the pseudo-periodicity of these structures, the energy-resolved transmission possesses pseudo-bands and pseudo-gaps. Channels with correlated surfaces exhibit wider pseudo-bands than their anti-correlated counterparts. By surveying channels with various combinations of material parameters, we found that a smaller transport mass increases the channel transmittivity and energy bandwidth of the pseudo-bands. A larger quantization mass yields a larger transmittivity in channels with anti-correlated surfaces. For channels with correlated surfaces, the dependence of transmittivity on quantization mass is complicated by odd-to-even mode transitions. An enhanced threshold energy in the energy-resolved transmission can also be observed in the presence of surface roughness. The computed enhanced threshold energy was able to achieve agreement with the experimental data for Si[110] and Si[100] devices.

Mesoscale and Nanoscale Physics
Low-temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped Pseudomorphic N-AlGaAs/GaInAs/GaAs Structures

H OHNO,JK LUO,K MATSUZAKI,H HASEGAWA

DOI: https://doi.org/10.1063/1.100826

IF: 4

1989-01-01

Applied Physics Letters

Abstract:Low-field mobility of two-dimensional electron gas (2DEG) in selectively doped pseudomorphic N-Al0.3Ga0.7As/ Ga0.8In0.13As/GaAs structures was measured as a function of carrier concentration as well as a function of temperature. In order to explain the observed mobility characteristics, scattering due to clustering has been considered. It is shown that the low-field mobility of 2DEG at low temperature (<40 K) can be explained by the scattering due to clustering together with the remote ionized impurity scattering.
Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

Julian Becker,Eckhart Fretwurst,Robert Klanner

DOI: https://doi.org/10.1016/j.sse.2010.10.00

2010-10-14

Abstract:The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and saturation velocities is a function of the orientation of the crystal lattice. This paper presents a new set of parameters for the mobility as function of temperature and electric field for <111> and <100> crystal orientation. These parameters are derived from time of flight measurements of drifting charge carriers in planar p^+nn^+ diodes in the temperature range between -30°C and 50°C and electric fields of 2x10^3 V/cm to 2x10^4 V/cm.

Instrumentation and Detectors
Quantum Transport of the 2D Surface State in a Nonsymmorphic Semimetal

Xue Liu,Chunlei Yue,Sergey V. Erohin,Yanglin Zhu,Abin Joshy,Jinyu Liu,Ana M Sanchez,David Graf,Pavel B. Sorokin,Zhiqiang Mao,Jin Hu,Jiang Wei

DOI: https://doi.org/10.1021/acs.nanolett.0c04946

IF: 10.8

2021-04-09

Nano Letters

Abstract:In a topological semimetal with Dirac or Weyl points, the bulk-boundary correspondence principle predicts a gapless edge mode if the essential symmetry is still preserved at the surface. The detection of such topological surface state has been considered as the fingerprint prove for crystals with nontrivial topological bulk band. On the contrary, it has been proposed that even with symmetry broken at the surface, a new surface band can emerge in nonsymmorphic topological semimetals. The symmetry reduction at the surface lifts the bulk band degeneracies and produces an unusual "floating" surface band with trivial topology. Here, we first report quantum transport probing to ZrSiSe thin flakes and directly reveal transport signatures of this new surface state. Remarkably, though topologically trivial, such a surface band exhibits substantial two-dimensional Shubnikov-de Haas quantum oscillations with high mobility, which signifies a new protection mechanism and may open applications for quantum computing and spintronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Electron Transport in Dirac Nodal-Line Semimetal ZrSiS

G. Hussain,X. Rao,N. Li,W. J. Chu,X. G. Liu,X. Zhao,X. F. Sun

DOI: https://doi.org/10.1016/j.physleta.2020.126938

IF: 2.707

2020-01-01

Physics Letters A

Abstract:We report a study of magnetization and transport properties such as electrical resistivity, thermal conductivity, and thermal Hall conductivity in high fields and at low temperatures for ZrSiS single crystals. Here, we find that the thermal conductivity (kappa(xx)/T) is strongly suppressed in applied fields, having a good correlation with the large positive transverse magnetoresistance (TMR). The thermal Hall conductivity (kappa(xy)/T) displays a sharp peak at extremely low field which reveals the high mobility of the electrons. In addition, the TMR displays clear Shubnikov de Haas (SdH) oscillation at low temperatures. Although the Zeeman splitting is obviously appeared in de Haas-van Alphen (dHvA) oscillation of the magnetization measurements and distinguished easily from the SdH oscillation. Negative longitudinal magnetoresistance (LMR) is also observed in ZrSiS which may be related to the chiral anomaly. (C) 2020 Elsevier B.V. All rights reserved.

Temperature-dependent Transport in a Sixfold Degenerate 2D Electron System on a H-Si(111) Surface

Temperature-Dependent Transport In A Sixfold Degenerate Two-Dimensional Electron System On A H-Si(111) Surface

Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems

High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces

Heavy Surface State In A Possible Topological Kondo Insulator: Magnetothermoelectric Transport On The (011) Plane Of Smb6

Thermoelectric Transport of the Half-Filled Lowest Landau Level in a P -Type Ge/SiGe Heterostructure

Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H–SiC

Sums of powers of consecutive q-integers

Interaction-controlled transport in a two-dimensional massless-massive Dirac system: Transition from degenerate to nondegenerate regimes

Magneto-transport characteristics of two-dimensional electron gas for Si δ -doped InAlAs/InGaAs single quantum well

Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Low-temperature Linear Transport of Two-Dimensional Massive Dirac Fermions in Silicene: Residual Conductivity and Spin/valley Hall Effects

Low Temperature Nanoscale Electronic Transport on the MoS_2 surface

Direct Measurement of Surface Transport on a Bulk Topological Insulator

Signatures of Quantum Transport Through Two-Dimensional Structures With Correlated and Anti-Correlated Interfaces

Low-temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped Pseudomorphic N-AlGaAs/GaInAs/GaAs Structures

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

Quantum Transport of the 2D Surface State in a Nonsymmorphic Semimetal

Electron Transport in Dirac Nodal-Line Semimetal ZrSiS