Abstract:A two-dimensional electron system placed in a magnetic field develops Landau levels, where strong Coulomb interactions lead to the appearance of many-body correlated ground states. Quantum numbers similar to the electron spin enable the understanding and control of complex ground state order and collective excitations. Owing to its spin, valley and orbital degrees of freedom, Bernal-stacked bilayer graphene offers a rich platform to pursue correlated phenomena in two dimensions. In this work, we fabricate dual-gated Bernal-stacked bilayer graphene devices and demonstrate unprecedented fine control over its valley isospin degrees of freedom using a perpendicular electric field. Higher sample quality enables us to probe regimes obscured by disorder in previous studies. We present evidence for a new even-denominator fractional quantum Hall state at filling factor {\nu} = 5/2. The 5/2 state is found to be spontaneously valley polarized in the limit of vanishing valley Zeeman splitting, consistent with a theoretical prediction made regarding the spin polarization of the Moore-Read state. In the vicinity of the even-denominator fractional quantum Hall states, we observe the appearance of the predicted Levin-Halperin daughter states of the Moore-Read Pfaffian wave function at {\nu}= 3/2, 7/2, and -1/2 and of the anti-Pfaffian at {\nu}= 5/2. These observations suggest the breaking of particle-hole symmetry in bilayer graphene. We construct a comprehensive valley polarization phase diagram for the Jain sequence fractional states surrounding filling factor 3/2. These results are well explained by a two-component composite fermion model, further demonstrating the SU(2) nature of the valley isospin in bilayer graphene. Our experiment paves the path for future efforts of manipulating the valley isospin in bilayer graphene to engineer exotic topological orders and quantum information processes.

Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

Temperature-dependent Transport in a Sixfold Degenerate 2D Electron System on a H-Si(111) Surface

Temperature-Dependent Transport In A Sixfold Degenerate Two-Dimensional Electron System On A H-Si(111) Surface

Direct measurement of discrete valley and orbital quantum numbers in a multicomponent quantum Hall system

Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems

High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces

Disorder-induced valley-orbit hybrid states in Si quantum dots

Valley Splitting in Si-Inversion Layers at Low Magnetic Fields

Valley splitting of single-electron Si MOS quantum dots

Valley-Polarized Quantum Anomalous-Hall Effects in Silicene

Transport of Surface States in the Bulk Quantum Hall Effect

Quantum Spin–quantum Anomalous Hall Effect with Tunable Edge States in Sb Monolayer-Based Heterostructures

Valley-polarized Quantum Anomalous Hall Effect in Silicene.

Odd-integer quantum Hall effect in graphene: interaction and disorder effects.

Nondegenerate Integer Quantum Hall Effect from Topological Surface States in Ag2Te Nanoplates.

Valley-tunable, even-denominator fractional quantum Hall state in the lowest Landau level of an anisotropic system

Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields

Dissipative Chiral Channels, Ohmic Scaling, and Half-Integer Hall Conductivity from Relativistic Quantum Hall Effect

Integer and fractional quantum anomalous Hall effects in pentalayer graphene

Valley Isospin Controlled Fractional Quantum Hall States in Bilayer Graphene

Non-conservation of the valley density and its implications for the observation of the valley Hall effect