K. Eng,R. N. McFarland,B. E. Kane
Abstract:We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the expected sixfold valley degeneracy for these surfaces is broken, resulting in an unequal occupation of the six valleys and anisotropy in the resistance. We hypothesize the misorientation of Si surface breaks the valley states into three unequally spaced pairs, but the observation of odd filling factors, is difficult to reconcile with non-interacting electron theory.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is related to the valley degeneracy breaking phenomenon in the two - dimensional electron system of the hydrogen - passivated Si(111) surface in the integer quantum Hall effect (IQHE). Specifically, the researchers observed that in the two - dimensional electron system formed on the Si(111) surface, the valley states, which should be six - fold degenerate theoretically, show asymmetry and anisotropy in experiments, which is difficult to reconcile with the non - interacting electron theory.
### Research Background
Traditionally, silicon field - effect transistors (FETs) rely on the interface between Si and high - band - gap barrier materials to confine mobile electrons or holes. However, this interface usually introduces inevitable disorder, limiting the carrier mobility. In recent years, a new technique has created a two - dimensional electron system (2DES) with high mobility by using a single - layer hydrogen - passivated Si(111) surface and setting the barrier material as vacuum. This method can achieve an electron mobility (24,000 cm²/Vs) one order of magnitude higher than that of traditional MOSFETs, enabling the observation of the integer quantum Hall effect (IQHE).
### Main Problems
1. **Breaking of Valley Degeneracy**:
- Under the effective - mass approximation, the ground state of the 2DES on the Si(111) surface should be six - fold degenerate, and each Si conduction - band valley contributes an equal number of carriers.
- The Shubnikov - de Haas (SdH) oscillations observed in experiments show contradictory valley degeneracy. Some results show two - fold degeneracy, some show six - fold degeneracy, and the resistivity is isotropic.
2. **Mechanism of Valley - State Splitting**:
- The researchers assume that the misorientation angle on the Si surface breaks the symmetry of the valley states, dividing the six valleys into three pairs of valleys with unequal spacing.
- The observed odd filling factors (such as ν = 3, 5, etc.) are difficult to explain with the non - interacting electron theory.
3. **Specific Value of Valley - State Energy Splitting**:
- By measuring the longitudinal resistance Rxx under different tilted magnetic fields, the researchers found a significant energy splitting of approximately 7 K, indicating that the six valleys are indeed asymmetrically split into two groups: two lower - energy valleys (A) and four higher - energy valleys (B and C).
### Solutions
To understand these phenomena, the researchers proposed a "7 K model", that is, the energy of two valleys is approximately 7 K lower than that of the other four valleys. This model can explain the following points:
- **Anisotropic Longitudinal Resistance**: Due to the non - uniform occupation of the six valleys, Rxx shows anisotropy.
- **Temperature Dependence of Energy Splitting**: By measuring the change of Rxx with temperature under different magnetic fields, the 7 K energy splitting is verified.
- **Behavior under Tilted Magnetic Fields**: By rotating the magnetic field angle, the researchers observed the crossing points between different energy levels, further supporting the 7 K model.
In addition, the study also explored possible physical mechanisms, such as the misorientation angle of the wafer, the influence of surface atomic steps on the electron wave function, and possible many - body effects, etc.
In summary, through detailed magnetotransport measurements, this paper reveals the phenomenon of valley degeneracy breaking in the 2DES on the hydrogen - passivated Si(111) surface and proposes a reasonable explanatory model. This research provides an important experimental basis for exploring new quantum phenomena.