Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields

V. T. Dolgopolov,M. Yu. Melnikov,A. A. Shashkin,S.-H. Huang,C. W. Liu,S. V. Kravchenko
DOI: https://doi.org/10.1134/S0021364018120019
2019-10-03
JETP Letters
Abstract:Abstract We have experimentally studied the fractional quantum Hall effect in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers p = 1, 2, 3, and 4. Minima with p = 3 disappear in magnetic fields below 7T, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors ν = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions.
physics, multidisciplinary
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