Fractional quantum Hall effect in CVD-grown graphene

M. Schmitz,T. Ouaj,Z. Winter,K. Rubi,K. Watanabe,T. Taniguchi,U. Zeitler,B. Beschoten,C. Stampfer
DOI: https://doi.org/10.1088/2053-1583/abae7b
2020-05-19
Abstract:We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling factors up to $\nu^* = 4$ are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.
Mesoscale and Nanoscale Physics,Materials Science
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