Half Integer Quantum Hall Effect in High Mobility Single Layer Epitaxial Graphene

Xiaosong Wu,Yike Hu,Ming Ruan,Nerasoa K. Madiomanana,John Hankinson,Mike Sprinkle,Claire Berger,Walt A. de Heer

DOI: https://doi.org/10.1063/1.3266524

2010-01-01

Abstract:The quantum Hall effect, with a Berry’s phase of π is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is ∼20 000 cm2/V⋅s at 4 K and 15 000 cm2/V⋅s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO2 and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.