Abstract:Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin–orbit and hyperfine interactions, while monolayer transition metal dichalcogenides (TMDs) possess a Zeeman effect-like band splitting in which the spin and valley degrees of freedom are nondegenerate. The surface states of topological insulators (TIs) exhibit a spin–momentum locking that opens up the possibility of controlling the spin degree of freedom in the absence of an external magnetic field. Nanostructures made of these materials are also viable for use in quantum computing applications involving the superposition and entanglement of individual charge and spin quanta. In this article, we review a selection of transport studies addressing the confinement and manipulation of charges in nanostructures fabricated from various 2D materials. We supply the entry-level knowledge for this field by first introducing the fundamental properties of 2D bulk materials followed by the theoretical background relevant to the physics of nanostructures. Subsequently, a historical review of experimental development in this field is presented, from the early demonstration of graphene nanodevices on SiO2 substrate to more recent progress in utilizing hexagonal boron nitride to reduce substrate disorder. In the second part of this article, we extend our discussion to TMDs and TI nanostructures. We aim to outline the current challenges and suggest how future work will be geared towards developing spin qubits in 2D materials.

High mobility transport in isotopically-enriched $^{12}$C and $^{13}$C exfoliated graphene

Half Integer Quantum Hall Effect in High Mobility Single Layer Epitaxial Graphene

High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility

Giant Carrier Mobility in Graphene with Enhanced Shubnikov–de Haas Quantum Oscillations: Implications for Low-Power-Consumption Device Applications

Graphene quantum dots embedded in a hexagonal BN sheet: identical influences of zigzag/armchair edges.

Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect of Single Crystalline Graphene Grown on Ge(110)

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Low-temperature quantum transport in CVD-grown single crystal graphene

Electron-hole Asymmetric Magnetotransport of Graphene-Colloidal Quantum Dot Device.

Coulomb oscillations in a gate-controlled few-layer graphene quantum dot.

Quantum transport in CVD graphene synthesized with liquid carbon precursor

Ballistic transport in graphene antidot lattices

Double Quantum Dots in Atomically-Precise Graphene Nanoribbons

Engineering A Robust Quantum Spin Hall State in Graphene Via Adatom Deposition

Possible charge ordering and anomalous transport in graphene/graphene quantum dot heterostructure

A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

Quasi-one-dimensional transport in graphene under a magnetic field

Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor Devices

Controllable Tunnel Coupling and Molecular States in a Graphene Double Quantum Dot

Exceptionally clean single-electron transistors from solutions of molecular graphene nanoribbons

Single-electron Transport in Graphene-like Nanostructures