Abstract:When electrons are confined in two-dimensional materials, quantum-mechanically enhanced transport phenomena such as the quantum Hall effect can be observed. Graphene, consisting of an isolated single atomic layer of graphite, is an ideal realization of such a two-dimensional system. However, its behaviour is expected to differ markedly from the well-studied case of quantum wells in conventional semiconductor interfaces. This difference arises from the unique electronic properties of graphene, which exhibits electron–hole degeneracy and vanishing carrier mass near the point of charge neutrality1,2. Indeed, a distinctive half-integer quantum Hall effect has been predicted3,4,5 theoretically, as has the existence of a non-zero Berry's phase (a geometric quantum phase) of the electron wavefunction—a consequence of the exceptional topology of the graphene band structure6,7. Recent advances in micromechanical extraction and fabrication techniques for graphite structures8,9,10,11,12 now permit such exotic two-dimensional electron systems to be probed experimentally. Here we report an experimental investigation of magneto-transport in a high-mobility single layer of graphene. Adjusting the chemical potential with the use of the electric field effect, we observe an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene. The relevance of Berry's phase to these experiments is confirmed by magneto-oscillations. In addition to their purely scientific interest, these unusual quantum transport phenomena may lead to new applications in carbon-based electronic and magneto-electronic devices.

[Development of a new in vitro test for dermal phototoxicity using a model of reconstituted human epidermis]

Integer and Fractional Quantum Hall Effect in Two-Terminal Measurements on Suspended Graphene

Energy gap of the even-denominator fractional quantum Hall state in bilayer graphene

Symmetry Breaking and Fractional Quantum Hall States in Suspended Bilayer and Trilayer Graphene

Experimental observation of the quantum Hall effect and Berry's phase in graphene

Orbitally controlled quantum Hall states in decoupled two-bilayer graphene sheets

Multicomponent Fractional Quantum Hall Effect in Graphene

A ug 2 01 6 Fractional Quantum Hall Bilayers at Half-Filling : Tunneli ng-driven Non-Abelian Phase

Tunable even- and odd-denominator fractional quantum Hall states in trilayer graphene

Fractional Quantum Hall Bilayers at Half-Filling: Tunneling-driven Non-Abelian Phase

Effect of Zeeman Splitting and Interlayer Bias Potential on Electron Transport in Bilayer Graphene

Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

Fractional Quantum Hall Effect at Ν = 5/2: Ground States, Non-Abelian Quasiholes, and Edge Modes in a Microscopic Model

Fractional quantum anomalous Hall effect in multilayer graphene

Quarter- and half-filled quantum Hall states and their competing interactions in bilayer graphene

Quantum Transport and Field-Induced Insulating States in Bilayer Graphene Pnp Junctions

Quantum Hall Effects in Monolayer-Bilayer Graphene Planar Junctions

Fractional quantum Hall effect in CVD-grown graphene

Broken Symmetry Quantum Hall States in Dual-Gated ABA Trilayer Graphene

Fractional quantum Hall effect of partons and the nature of the 8/17 state in the zeroth Landau level of bilayer graphene