Fractional Quantum Anomalous Hall Effect in a Graphene Moire Superlattice

Zhengguang Lu,Tonghang Han,Yuxuan Yao,Aidan P. Reddy,Jixiang Yang,Junseok Seo,Kenji Watanabe,Takashi Taniguchi,Liang Fu,Long Ju

2023-12-27

Abstract:The fractional quantum anomalous Hall effect (FQAHE), the analog of the fractional quantum Hall effect1 at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking. The demonstration of FQAHE could lead to non-Abelian anyons which form the basis of topological quantum computation. So far, FQAHE has been observed only in twisted MoTe2 (t-MoTe2) at moire filling factor v > 1/2. Graphene-based moire superlattices are believed to host FQAHE with the potential advantage of superior material quality and higher electron mobility. Here we report the observation of integer and fractional QAH effects in a rhombohedral pentalayer graphene/hBN moire superlattice. At zero magnetic field, we observed plateaus of quantized Hall resistance Rxy = h/(ve^2) at filling factors v = 1, 2/3, 3/5, 4/7, 4/9, 3/7 and 2/5 of the moire superlattice respectively. These features are accompanied by clear dips in the longitudinal resistance Rxx. In addition, at zero magnetic field, Rxy equals 2h/e^2 at v = 1/2 and varies linearly with the filling factor-similar to the composite Fermi liquid (CFL) in the half-filled lowest Landau level at high magnetic fields. By tuning the gate displacement field D and v, we observed phase transitions from CFL and FQAH states to other correlated electron states. Our graphene system provides an ideal platform for exploring charge fractionalization and (non-Abelian) anyonic braiding at zero magnetic field, especially considering a lateral junction between FQAHE and superconducting regions in the same device.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

This paper attempts to address the observation of integer quantum anomalous Hall effect (IQAHE) and fractional quantum anomalous Hall effect (FQAHE) in a five-layer rhombohedral stacked graphene and hexagonal boron nitride (hBN) moiré superlattice. Specifically:

1. **Experimental Observation**: The research team observed both integer and fractional quantum anomalous Hall effects in a five-layer rhombohedral stacked graphene/hBN moiré superlattice under zero magnetic field conditions.

2. **Topological Flat Bands**: By tuning the gate-controlled displacement field (D), the researchers discovered phase transitions from composite Fermi liquid (CFL) and fractional quantum anomalous Hall state (FQAH) to other correlated electronic states.

3. **Theoretical Validation**: The paper demonstrates that the Hall resistance exhibits quantized plateaus at different filling factors, and the longitudinal resistance shows significant drops at these filling factors.

4. **New Material Platform**: This work indicates that graphene-based moiré superlattices are an ideal platform for exploring charge fractionalization and non-Abelian anyon braiding phenomena under zero magnetic field conditions.

In summary, the main purpose of this paper is to demonstrate the realization of integer and fractional quantum anomalous Hall effects in a specific graphene/hBN moiré superlattice system and to explore its potential applications.