Fractional Quantum Anomalous Hall Effect in a Graphene Moiré Superlattice

Zhengguang Lu,Kenji Watanabe,Liang Fu,Jixiang Yang,Long Ju,T. Taniguchi,Yuxuan Yao,Junseok Seo,Aidan P. Reddy,Tonghang Han
Abstract:The fractional quantum anomalous Hall effect (FQAHE), the analog of the fractional quantum Hall effect 1 at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking 2–5 . The demonstration of FQAHE could lead to non-Abelian anyons which form the basis of topological quantum computation 6–8 . So far, FQAHE has been observed only in twisted MoTe 2 (t-MoTe 2 ) at moiré filling factor v > 1/2 9–12 . Graphene-based moiré superlattices are believed to host FQAHE with the potential advantage of superior material quality and higher electron mobility. Here we report the observation of integer and fractional QAH effects in a rhombohedral pentalayer graphene/hBN moiré superlattice. At zero magnetic field, we observed plateaus of quantized Hall resistance R xy = 𝒉 𝒆 𝟐 , 𝟑𝒉 𝟐𝒆 𝟐 , 𝟓𝒉 𝟑𝒆 𝟐 , 𝟕𝒉 𝟒𝒆 𝟐 , 𝟗𝒉 𝟒𝒆 𝟐 , 𝟕𝒉 𝟑𝒆 𝟐 , 𝟓𝒉 𝟐𝒆 𝟐 at filling factors v = 1, 2/3, 3/5, 4/7, 4/9, 3/7 and 2/5 of the moiré superlattice respectively. These features are accompanied by clear dips in the longitudinal resistance R xx at the same filling factors and they correspond to states with Chern number C = v . In addition, at zero magnetic field, R xy = 𝟐𝒉 𝒆 𝟐 near v
Physics
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