Abstract:In a multi-valley electronic band structure, lifting of the valley degeneracy is associated with rotational symmetry breaking in the electronic fluid, and may emerge through spontaneous symmetry breaking order, or through a large response to a small external perturbation such as strain. In this work we use scanning tunneling microscopy to investigate an unexpected rotational symmetry breaking in Landau levels formed in the unusual floating surface band of ZrSiS. We visualize a ubiquitous splitting of Landau levels into valley-polarized sub-levels. We demonstrate methods to measure valley-selective Landau level spectroscopy, to infer unknown Landau level indices, and to precisely measure each valley's Berry phase in a way that is agnostic to the band structure and topology of the system. These techniques allow us to obtain each valley's dispersion curve and infer a rigid valley-dependent contribution to the band energies. Ruling out spontaneous symmetry breaking by establishing the sample-dependence of this valley splitting, we explain the effect in terms of residual strain. A quantitative estimate indicates that uniaxial strain can be measured to a precision of $ \lt 0.025 \% $. The extreme valley-polarization of the Landau levels results from as little as $ \sim 0.1 \% $ strain, and this suggests avenues for manipulation using deliberate strain engineering.

Valley Splitting in Si-Inversion Layers at Low Magnetic Fields

Magnetic-field dependence of valley splitting for Si quantum wells grown on tilted SiGe substrates

Spin-valley Coupling in a Two-Dimensional VSi2N4 Monolayer

Valley polarization of Landau levels driven by residual strain in the ZrSiS surface band

Valley splitting of single-electron Si MOS quantum dots

Valley-Splitting and Valley-Dependent Inter-Landau-Level Optical Transitions in Monolayer Mos2 Quantum Hall Systems

Interface and electromagnetic effects in the valley splitting of Si quantum dots

Valley-related multiple Hall effect in single-layer VSi2P4

Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface

Valley Contrasting Magnetoluminescence in Monolayer MoS$_{2}$ Quantum Hall Systems

Valley-related multiple Hall effect in monolayer V Si 2 P 4

Mapping of valley splitting by conveyor-mode spin-coherent electron shuttling

Valley Zeeman effect and spin-valley polarized conductance in monolayer MoS$_2$ in a perpendicular magnetic field

Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling

Large valley splitting induced by spin-orbit coupling effects in monolayer Hf3N2O2

Non-conservation of the valley density and its implications for the observation of the valley Hall effect

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Large and Controllable Spin-Valley Splitting in Two-Dimensional WS2/h-VN Heterostructure

Valley splitting depending on the size and location of a silicon quantum dot

The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI2 Heterostructures

Induced valley and spin splitting in monolayer MoS2 by interfacial magnetic proximity of half-Heusler LiBeN substrate