Abstract:Enhancing valley splitting in SiGe heterostructures is crucial for developing silicon spin qubits. Complex SiGe heterostructures, sharing a common feature of four-monolayer (4 ML) Ge layer next immediately to the silicon quantum well (QW), have been computationally designed in 2013 to have giant valley splitting approaching 9 meV and hence could be used to overcome the challenge of valley splitting towards the experimental realization of Si quantum computing. However, none of them has been successfully fabricated, perhaps due to their complexity. Here, we remarkably simplify the originally designed complex SiGe heterostructures by laying out the Si QW directly on the SiGe substrate followed by capping a (Ge4Si4)n superlattice (SL) barrier with a sacrifice in valley splitting (VS), which is reduced from a maximum value of 8.7 to 5.2 meV. Even the smallest number of SL periods (n=1) will also give a sizable VS of 1.6 meV, which is large enough for developing stable spin qubits. We further develop an effective Hamiltonian model to reveal the physical mechanism underlying the enhanced valley splitting by the (Ge4Si4)n SL barriers. We surprisingly find that the presence of the SL barrier will reduce rather than enhance the VS in most cases. The only exception is the (Ge4Si4)n SL barriers, where their miniband states have such a strong coupling with Si QW valley states that they provide an even larger VS. These findings lay a solid theoretical foundation for overcoming the valley splitting issue of SiGe heterostructures in the experiment that is heading toward Si quantum computing.

Interface and electromagnetic effects in the valley splitting of Si quantum dots

Valley splitting depending on the size and location of a silicon quantum dot

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells

Valley splitting of single-electron Si MOS quantum dots

Spin and valley-orbit splittings in SiGe/Si heterostructures

Lower Bound on the Spread of Valley Splitting in Si/SiGe Quantum Wells Induced by Atomic Rearrangement at the Interface

Low disorder and high valley splitting in silicon

Engineered valley-orbit splittings in quantum confined nanostructures in silicon

Impact of the valley orbit coupling on exchange gate for spin qubits in silicon quantum dots

Mapping of valley splitting by conveyor-mode spin-coherent electron shuttling

Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling

Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures

Genetic Design of Enhanced Valley Splitting Towards a Spin Qubit in Silicon.

Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability

Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers

Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot

Disorder-induced valley-orbit hybrid states in Si quantum dots

Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures

Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures