Abstract:The presence of degenerate conduction band valleys and how they are mixed by interfaces play critical roles in determining electron interaction and spectrum in a silicon nanostructure. Here we investigate how the valley phases affect the exchange interaction in a symmetric two-electron silicon double quantum dot. Through a configuration interaction calculation, we find that exchange splitting is suppressed at a finite value of valley phase difference between the two dots, and reaches its minimum value ({\sim} 0) when the phase difference is {\pi}. Such a suppression can be explained using the Hubbard model, through the valley-phase-dependent dressing by the doubly occupied states on the ground singlet and triplet states. The contributions of the higher orbital states also play a vital role in determining the value of the exchange energy in general, which is a crucial parameter for applications such as exchange gates for spin qubits.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **The exchange gate of spin qubits in silicon quantum dots is affected by valley - orbital coupling**.
Specifically, the article explores how in the silicon double - quantum - dot (DQD) system, the valley degrees of freedom (i.e., the degeneracy of the silicon conduction band) and their interface - induced mixing affect the exchange interaction between two electrons. It is found that the valley - phase difference has a significant impact on the exchange splitting, especially when the valley - phase difference is π, the exchange splitting reaches a minimum (close to 0). This phenomenon is of great significance for the design of exchange gates based on spin qubits.
### Key problems and challenges
1. **Influence of valley degrees of freedom**:
- There are degenerate valleys in the conduction band of silicon materials. These valleys are mixed in quantum dots due to interface effects, resulting in changes in electron interactions and energy spectra.
- The valley - phase difference (especially between different quantum dots) has a significant impact on the exchange interaction.
2. **Suppression of exchange splitting**:
- Through configuration - interaction (CI) calculations, the authors find that when the valley - phase difference between the two quantum dots is π, the exchange splitting is strongly suppressed and can even approach zero.
- This suppression can be explained by the Hubbard model, that is, the modification effect of the valley - phase - dependent double - occupancy state on the ground - state singlet and triplet states.
3. **Role of higher - order orbital states**:
- Higher - order orbital states (such as p - and d - orbitals) also make important contributions to the value of the exchange energy, especially in smaller quantum dots, where the orbital excitation energy is much smaller than the Coulomb interaction energy.
4. **Challenges of initialization and control**:
- To ensure the effectiveness of the exchange - gate protocol, the valley splitting in each quantum dot should be much larger than the thermal broadening, so as to ensure that the spin qubits can be correctly initialized.
- If the valley splitting is too small, additional singlet and triplet states will participate in the low - energy two - electron dynamics, thus affecting the operation of the exchange gate.
### Conclusion
This research shows that valley - orbital coupling has a key impact on the exchange energy in silicon double - quantum dots, especially the sensitivity of the exchange splitting to the valley - phase difference. To achieve reliable exchange - gate operations, it is necessary to ensure that the valley splitting is large enough and the contributions of higher - order orbital states need to be considered. In addition, the interface roughness affects both the magnitude and phase of the valley - orbital coupling. Therefore, understanding and characterizing the interface quality are crucial for realizing scalable silicon - based spin quantum computing.
### Formula summary
- **Tunneling - coupling matrix elements**:
\[
t_{++} = t_{--} = \frac{t_0}{2}(1 + e^{-i\phi})
\]
\[
t_{+-} = t_{-+} = \frac{t_0}{2}(1 - e^{-i\phi})
\]
where \( t_0 \) is the tunneling - coupling strength within the same eigen - valley, and \( \phi=\phi_L-\phi_R \) is the valley - phase difference between the two quantum dots.
- **Valley splitting and phase**:
\[
\bar{\Delta}_L = |\bar{\Delta}_L|e^{-i\bar{\phi}_L}, \quad \bar{\Delta}_R = |\bar{\Delta}_R|e^{-i\bar{\phi}_R}
\]
where \( 2|\bar{\Delta}_L| \) and \( 2|\bar{\Delta}_R| \) are the valley splittings of the left and right quantum dots respectively, and \( \bar{\phi}_L \) and \( \bar{\phi}_R \) are the corresponding valley phases.
Through these formulas and analyses, the authors reveal the important influence of valley - orbital coupling on the exchange gate and propose directions for future research.