Abstract:SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. We demonstrate a technique to reconstruct 3D interfacial atomic structure spanning multiqubit areas by combining data from two verifiably atomic-resolution microscopy techniques. Utilizing scanning tunneling microscopy (STM) to track molecular beam epitaxy (MBE) growth, we image surface atomic structure following deposition of each heterostructure layer revealing nanosized SiGe undulations, disordered strained-Si atomic steps, and nonconformal uncorrelated roughness between interfaces. Since phenomena such as atomic intermixing during subsequent overgrowth inevitably modify interfaces, we measure post-growth structure via cross-sectional high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). Features such as nanosized roughness remain intact, but atomic step structure is indiscernible in $1.0\pm 0.4$~nm-wide intermixing at interfaces. Convolving STM and HAADF-STEM data yields 3D structures capturing interface roughness and intermixing. We utilize the structures in an atomistic multivalley effective mass theory to quantify qubit spectral variability. The results indicate (1) appreciable valley splitting (VS) variability of roughly $\pm$ $50\%$ owing to alloy disorder, and (2) roughness-induced double-dot detuning bias energy variability of order $1-10$ meV depending on well thickness. For measured intermixing, atomic steps have negligible influence on VS, and uncorrelated roughness causes spatially fluctuating energy biases in double-dot detunings potentially incorrectly attributed to charge disorder.

Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures

Mapping of valley splitting by conveyor-mode spin-coherent electron shuttling

Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling

Cryogen-free scanning gate microscope for the characterization of Si/Si$_{0.7}$Ge$_{0.3}$ quantum devices at milli-Kelvin temperatures

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells

Interface and electromagnetic effects in the valley splitting of Si quantum dots

Valley splitting depending on the size and location of a silicon quantum dot

Lower Bound on the Spread of Valley Splitting in Si/SiGe Quantum Wells Induced by Atomic Rearrangement at the Interface

Valley splitting of single-electron Si MOS quantum dots

Spin and valley-orbit splittings in SiGe/Si heterostructures

Scanned single-electron probe inside a silicon electronic device

Engineered valley-orbit splittings in quantum confined nanostructures in silicon

Scanning Tunneling Microscopy of Photoexcited Carriers at the Si(001) Surface

Quantum enhanced electric field mapping within semiconductor devices

Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot

Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability

Genetic Design of Enhanced Valley Splitting Towards a Spin Qubit in Silicon.

Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

Probing valley phenomena with gate-defined valley splitters