Abstract:The achievement of universal quantum computing critically relies on scalability. However, ensuring the necessary uniformity for scalable silicon electron spin qubits poses a significant challenge due to the considerable fluctuations in valley splitting energy(E VS ) across quantum dot arrays, which impede the initialization of qubit systems comprising multiple spins and give rise to spin–valley entanglement resulting in the loss of spin information. These E VS fluctuations have been attributed to variations in the in-plane averaged alloy concentration along the confinement direction of Si/SiGe quantum wells. In this study, employing atomistic pseudopotential calculations, we unveil a significant spectrum of E VS even in the absence of such concentration fluctuations. This spectrum represents the lower limit of the wide range of E VS observed in numerous Si/SiGe quantum devices. By constructing simplified interface atomic step models, we analytically demonstrate that the lower bound of the E VS spread originates from the in-plane random distribution of Si and Ge atoms within SiGe barriers——an inherent characteristic that has been previously overlooked. Additionally, we propose an interface engineering approach to mitigate the in-plane randomness-induced fluctuations in E VS by inserting a few monolayers of pure Ge barrier at the Si/SiGe interface. Our findings provide valuable insights into the critical role of in-plane randomness in determining E VS in Si/SiGe quantum devices and offer reliable methods to enhance the feasibility of scalable Si-based spin qubits.

Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling

Mapping of valley splitting by conveyor-mode spin-coherent electron shuttling

Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells

Interface and electromagnetic effects in the valley splitting of Si quantum dots

Spin and valley-orbit splittings in SiGe/Si heterostructures

Valley splitting depending on the size and location of a silicon quantum dot

Engineered valley-orbit splittings in quantum confined nanostructures in silicon

Valley splitting of single-electron Si MOS quantum dots

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot

Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture

Large and Controllable Spin-Valley Splitting in Two-Dimensional WS2/h-VN Heterostructure

Lower Bound on the Spread of Valley Splitting in Si/SiGe Quantum Wells Induced by Atomic Rearrangement at the Interface

Genetic Design of Enhanced Valley Splitting Towards a Spin Qubit in Silicon.

High-fidelity single-spin shuttling in silicon

Controllable Enormous Valley Splitting in Janus WSSe on CrN Monolayer

Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder

Tunable Valley Splitting and Anomalous Valley Hall Effect in VTe2/Ga2S3 Heterostructures