Lower Bound on the Spread of Valley Splitting in Si/SiGe Quantum Wells Induced by Atomic Rearrangement at the Interface

Gang Wang,Shan Guan,Zhi-Gang Song,Jun-Wei Luo

DOI: https://doi.org/10.1088/1674-1056/acf208

2023-01-01

Chinese Physics B

Abstract:The achievement of universal quantum computing critically relies on scalability. However, ensuring the necessary uniformity for scalable silicon electron spin qubits poses a significant challenge due to the considerable fluctuations in valley splitting energy(E VS ) across quantum dot arrays, which impede the initialization of qubit systems comprising multiple spins and give rise to spin–valley entanglement resulting in the loss of spin information. These E VS fluctuations have been attributed to variations in the in-plane averaged alloy concentration along the confinement direction of Si/SiGe quantum wells. In this study, employing atomistic pseudopotential calculations, we unveil a significant spectrum of E VS even in the absence of such concentration fluctuations. This spectrum represents the lower limit of the wide range of E VS observed in numerous Si/SiGe quantum devices. By constructing simplified interface atomic step models, we analytically demonstrate that the lower bound of the E VS spread originates from the in-plane random distribution of Si and Ge atoms within SiGe barriers——an inherent characteristic that has been previously overlooked. Additionally, we propose an interface engineering approach to mitigate the in-plane randomness-induced fluctuations in E VS by inserting a few monolayers of pure Ge barrier at the Si/SiGe interface. Our findings provide valuable insights into the critical role of in-plane randomness in determining E VS in Si/SiGe quantum devices and offer reliable methods to enhance the feasibility of scalable Si-based spin qubits.