Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

Luis Fabián Peña,Justine C. Koepke,Joseph Houston Dycus,Andrew Mounce,Andrew D. Baczewski,N. Tobias Jacobson,Ezra Bussmann
DOI: https://doi.org/10.1038/s41534-024-00827-8
IF: 10.758
2024-03-28
npj Quantum Information
Abstract:SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable SiGe-based quantum computing. By convolving data from scanning tunneling microscopy and high-angle annular dark field scanning transmission electron microscopy, we reconstruct 3D interfacial atomic structure and employ an atomistic multi-valley effective mass theory to quantify qubit spectral variability. The results indicate (1) appreciable valley splitting (VS) variability of ~50% owing to alloy disorder and (2) roughness-induced double-dot detuning bias energy variability of order 1–10 meV depending on well thickness. For measured intermixing, atomic steps have negligible influence on VS, and uncorrelated roughness causes spatially fluctuating energy biases in double-dot detunings potentially incorrectly attributed to charge disorder. Our approach yields atomic structure spanning orders of magnitude larger areas than post-growth microscopy or tomography alone, enabling more holistic predictions of disorder-induced qubit variability.
physics, condensed matter, applied, atomic, molecular & chemical,quantum science & technology
What problem does this paper attempt to address?
The problems that this paper attempts to solve are: **How to understand and quantify the variability of Si/SiGe quantum dots (qubits) caused by interface disorder, especially the variability of valley splitting (VS) and double - dot detuning bias energy**. These problems pose potential obstacles to reliable SiGe - based quantum computing. ### Detailed Explanation: 1. **Background Problems**: - SiGe hetero - epitaxial growth provides an ideal host material for quantum dot qubits, but the residual interface disorder can lead to variability between qubits, which may become an obstacle to reliable SiGe - based quantum computing. - Interface disorder mainly stems from two factors: 1. **Alloy Disorder**: Random mixing of Si and Ge at the interface. 2. **Interface Roughness**: Growth roughness between Si and SiGe layers. 2. **Research Objectives**: - Reconstruct the 3D interface atomic structure by combining data from scanning tunneling microscopy (STM) and high - angle annular dark - field scanning transmission electron microscopy (HAADF - STEM). - Use the atomistic multi - valley effective mass theory to quantify the qubit spectral variability caused by interface disorder. 3. **Specific Problems**: - **Valley Splitting (VS) Variability**: The valley splitting variability caused by alloy disorder is approximately 50%. - **Double - Dot Detuning Bias Energy Variability**: The double - dot detuning bias energy variability caused by interface roughness is between 1 - 10 meV, depending on the well width. 4. **Solutions**: - Evaluate the atomic structure of the Si/SiGe hetero - interface through a multi - modal, multi - perspective microscopy method. - Use these structures to model the (qubit) valley splitting (VS) and orbital energy level (detuning) variability between dots. - Characterize the interface undulation, alloy disorder and their influence on the spectral properties of quantum dots. ### Conclusion: This research has successfully reconstructed the Si/SiGe interface atomic structure over a large area (>1 μm²) by integrating multiple microscopy techniques and has revealed the specific influence of interface disorder on the performance of quantum dot qubits. These findings are helpful for understanding and controlling the performance limits in quantum computing applications.