Abstract:Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions, hence the spin properties. It is, therefore, important to understand how reproducible the qubits can be, in order to assess strategies to cope with variability, and to set constraints on the quality of materials and fabrication. Here we model the variability of single qubit properties (Larmor and Rabi frequencies) due to disorder at the Si/SiO$_2$ interface (roughness, charge traps) in metal-oxide-semiconductor devices. We consider both electron qubits (with synthetic spin-orbit coupling fields created by micro-magnets) and hole qubits (with intrinsic spin-orbit coupling). We show that charge traps are much more limiting than interface roughness, and can scatter Rabi frequencies over one order of magnitude. We discuss the implications for the design of spin qubits and for the choice of materials.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **In the presence of the spin - orbit coupling mechanism, semiconductor spin qubits have significant performance differences between devices due to factors such as interface roughness, charge traps, layout or process non - uniformity**. Specifically, these problems will affect the repeatability and consistency of spin qubits, thus posing challenges to the application of quantum information processing technology. ### Detailed Interpretation 1. **Background and Motivation** - Semiconductor spin quantum dots have become a promising platform for quantum technology. - Materials such as silicon and germanium are particularly attractive because their main isotopes do not contain nuclear spins, which reduces the interference with electron spins. - However, in practical applications, the performance of spin qubits is affected by multiple factors, especially problems such as interface roughness and charge traps. 2. **Research Objectives** - **Understand the Sources of Variability**: Through modeling and analysis, understand how interface roughness and charge traps affect the properties of a single qubit (such as Larmor frequency and Rabi frequency). - **Evaluate Strategies**: Provide strategic suggestions for dealing with variability and set quality constraints for materials and manufacturing. - **Compare Different Types of Qubits**: Compare the performance of electron - spin qubits (with a synthetic spin - orbit coupling field) and hole - spin qubits (with an intrinsic spin - orbit coupling). 3. **Main Findings** - **The Influence of Charge Traps is Greater than that of Interface Roughness**: The influence of charge traps on the Rabi frequency is particularly significant and may cause the Rabi frequency to be dispersed within an order of magnitude. - **The Influence of Interface Roughness**: Although interface roughness also affects the performance of qubits, its influence is relatively small. - **Implications for Design and Material Selection**: The research results provide important guidance for qubit design, material selection, and reducing variability. 4. **Methodology** - **Device Description**: Two types of silicon devices were considered: hole - spin qubits with intrinsic spin - orbit coupling and electron - spin qubits with synthetic spin - orbit coupling. - **Disorder Model**: Two disorder sources, interface roughness and charge traps, were introduced, and the influence of these disorders on qubit performance was studied through numerical simulation. - **Statistical Analysis**: Through statistical analysis of a large number of random samples, the standard deviation and relative standard deviation of Larmor frequency and Rabi frequency were quantified. 5. **Conclusions and Prospects** - **Key Factors**: Charge traps are the main factors causing qubit performance variation, while the influence of interface roughness is relatively small. - **Future Directions**: Potential solutions to reduce variability by improving material quality and optimizing design were proposed. ### Formula Summary The formulas involved in the paper mainly include: - **Relative Standard Deviation (RSD)**: \[ \tilde{\sigma}(f)=\frac{\sigma(f)}{f} \] where $\sigma(f)$ is the standard deviation and $f$ is the average value. - **Interquartile Range (IQR)**: \[ IQR(f)=\hat{f}(0.75)-\hat{f}(0.25) \] where $\hat{f}(\alpha)$ is the frequency such that a proportion $\alpha$ of devices have $f_i < \hat{f}(\alpha)$. - **Correlation Coefficient $\rho$**: \[ \rho=\frac{1}{\sigma(X)\sigma(Y)}E[(X - X)(Y - Y)] \] or: \[ \rho=\frac{1}{\sigma(X)\sigma(Y)(N - 1)}\sum_{i = 1}^N(X_i - X)(Y_i - Y) \] These formulas are used to quantify and analyze the variability of spin qubit performance.

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