Abstract:The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

Variability of electron and hole spin qubits due to interface roughness and charge traps

Mitigating variability in epitaxial-heterostructure-based spin-qubit devices by optimizing gate layout

Bounds to electron spin qubit variability for scalable CMOS architectures

Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures

Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise

Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation

Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability

Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

Impact of disorder on the distribution of gate coupling strengths in a spin qubit device

Engineering Spin‐Orbit Interactions in Silicon Qubits at the Atomic‐Scale

Hole spin driving by strain-induced spin-orbit interactions

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Quantum computing with acceptor spins in silicon

Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits

Electrical operation of hole spin qubits in planar MOS silicon quantum dots

Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures

Density inhomogeneities and Rashba spin-orbit coupling interplay in oxide interfaces

Anisotropic exchange interaction of two hole-spin qubits

Robustness of electron charge shuttling: Architectures, pulses, charge defects and noise thresholds