Abstract:The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Dephasing of Si spin qubits due to charge noise

Electron Spin Relaxation Due to Charge Noise

Leakage-induced Decoherence During Single Electron Spin Manipulation in a Double Quantum Dot

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Charged-Impurity-Induced Dephasing Of A Voltage-Controlled Coded Qubit Based On Electron Spin In A Triple Quantum Dot

Noise Correlations in a 1D Silicon Spin Qubit Array

Charge-noise induced dephasing in silicon hole-spin qubits

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot

Spin-orbit Coupling and Electric-Dipole Spin Resonance in a Nanowire Double Quantum Dot

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon-Germanium Quantum Dot Qubits

Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure

Spin Decoherence in a Two-Qubit CPHASE Gate: the Critical Role of Tunneling Noise

Intrinsic And Extrinsic Decoherence For Charge Qubit Dynamics In A Double Quantum Dot

Dephasing Dynamics of Electron and Hole Spin Qubits in Self-Assembled Quantum Dots (conference Presentation)

Do micromagnets expose spin qubits to charge and Johnson noise?

Decoherence of electron spin qubit during transfer between two semiconductor quantum dots at low magnetic fields

Coherent electron transport in silicon quantum dots

Leakage and dephasing in $^{28}$Si-based exchange-only spin qubits

Electric-dipole-induced resonance and decoherence of a dressed spin in a quantum dot