Abstract:The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

Intrinsic And Extrinsic Decoherence For Charge Qubit Dynamics In A Double Quantum Dot

Quality Factor and Decoherence Mechanism of Rabi Oscillation in Semiconductor Quantum Dot

Leakage-induced Decoherence During Single Electron Spin Manipulation in a Double Quantum Dot

Internal and external polarization memory loss in single quantum dots

Improving Intrinsic Decoherence in Multi-Quantum-Dot Charge Qubits

The Effect of Biexciton, Wetting Layer Leakage and Auger Capture on Rabi Oscillation Damping in Quantum Dots

Dissipative dynamics of coupled quantum dots under quantum measurement

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Charged-Impurity-Induced Dephasing Of A Voltage-Controlled Coded Qubit Based On Electron Spin In A Triple Quantum Dot

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Decoherence of qubits: results beyond Markovian approximation

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Decoherence of electron spin qubit during transfer between two semiconductor quantum dots at low magnetic fields

Decoherence-free quantum dynamics in circuit QED system

Quantum Interference and Coherent Population Trapping in a Double Quantum Dot

Spin Blockade and Coherent Dynamics of High-Spin States in a Three-Electron Double Quantum Dot

Effect of Quantum Point Contact Measurement on Electron Spin State in Quantum Dots

Impact of AC Magnetic Field on Decoherence of Quantum Dot based Single Spin Qubit System

Impact of leakage to the dynamic of a ST$_0$ qubit implemented on a Double Quantum Dot device

Quantum correlations and coherence in a mixed spin- (12,1) Heisenberg dimer under intrinsic decoherence

Phonon Dephasing, Entanglement and Exchange-Only Toffoli Gate Sequence in Quantum Dot Spin Chains