Abstract:The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

Impact of leakage to the dynamic of a ST$_0$ qubit implemented on a Double Quantum Dot device

Leakage-induced Decoherence During Single Electron Spin Manipulation in a Double Quantum Dot

Charged-Impurity-Induced Dephasing Of A Voltage-Controlled Coded Qubit Based On Electron Spin In A Triple Quantum Dot

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Pulse Designed Coherent Dynamics of a Quantum Dot Charge Qubit

Dissipative dynamics of coupled quantum dots under quantum measurement

Theory Of Electronic Properties And Quantum Spin Blockade In A Gated Linear Triple Quantum Dot With One Electron Spin Each

Leakage and dephasing in $^{28}$Si-based exchange-only spin qubits

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Intrinsic And Extrinsic Decoherence For Charge Qubit Dynamics In A Double Quantum Dot

Dynamic sweet spot of driven flopping-mode spin qubits in planar quantum dots

Leakage-current lineshapes from inelastic cotunneling in the Pauli spin blockade regime

Feedback-tuned noise-resilient gates for encoded spin qubits

Spin-Valley Qubit Dynamics In Exchange Coupled Silicon Quantum Dots

Spin flip locking by the tunneling and relaxation in a driven double quantum dot with spin-orbit coupling

Leakage Mobility in Superconducting Qubits as a Leakage Reduction Unit

Large spin shuttling oscillations enabling high-fidelity single qubit gates

Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise

Analysis and mitigation of residual exchange coupling in linear spin qubit arrays

Quantum dot-based high-fidelity universal quantum gates in noisy environment

Numerical Simulation of Leakage Effect for Quantum NOT Operation on Three-Josephson-junction Flux Qubit