Abstract:The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

Charged-Impurity-Induced Dephasing Of A Voltage-Controlled Coded Qubit Based On Electron Spin In A Triple Quantum Dot

Quantum Circuits Based on Coded Qubits Encoded in Chirality of Electron Spin Complexes in Triple Quantum Dots

Magnetic impurity effects on the entanglement of three-qubit Heisenberg XY chain with intrinsic decoherence

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Theory Of Electronic Properties And Quantum Spin Blockade In A Gated Linear Triple Quantum Dot With One Electron Spin Each

Optimal control of a charge qubit in a double quantum dot with a Coulomb impurity

Intrinsic And Extrinsic Decoherence For Charge Qubit Dynamics In A Double Quantum Dot

Leakage-induced Decoherence During Single Electron Spin Manipulation in a Double Quantum Dot

Charge-induced energy shift of a single-spin qubit under a magnetic-field gradient

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Physics of Lateral Triple Quantum-Dot Molecules with Controlled Electron Numbers

Improving Intrinsic Decoherence in Multi-Quantum-Dot Charge Qubits

Entangling spin and charge degrees of freedom in semiconductor quantum dots

Impact of leakage to the dynamic of a ST$_0$ qubit implemented on a Double Quantum Dot device

Controllable electron spin dephasing due to phonon state distinguishability in a coupled quantum dot system

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Coherently controlling robust spin-orbit qubits of electrons in nanowire quantum dots

Selective optical manipulation of the spin state of a single magnetic impurity in a semiconductor quantum dot

Controlled phase gate in exchange coupled quantum dots affected by quasistatic charge noise

Quantum dot dephasing by edge states

Spin Blockade and Coherent Dynamics of High-Spin States in a Three-Electron Double Quantum Dot