Abstract:The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

Improving Intrinsic Decoherence in Multi-Quantum-Dot Charge Qubits

Tuning Quantum Dot States with Optical Fields

Intrinsic And Extrinsic Decoherence For Charge Qubit Dynamics In A Double Quantum Dot

Leakage-induced Decoherence During Single Electron Spin Manipulation in a Double Quantum Dot

Valence Holes As Luttinger Spinor Based Qubits in Quantum Dots

Dissipative dynamics of coupled quantum dots under quantum measurement

Physics of Lateral Triple Quantum-Dot Molecules with Controlled Electron Numbers

Charged-Impurity-Induced Dephasing Of A Voltage-Controlled Coded Qubit Based On Electron Spin In A Triple Quantum Dot

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Noise-induced Collective Quantum State Preservation in Spin Qubit Arrays

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Double Quantum Dots in Carbon Nanotubes

Scalable qubit architecture based on holes in quantum dot molecules

Quadrupolar induced suppression of nuclear spin bath fluctuations in self-assembled quantum dots

Long-distance photon-mediated and short-distance entangling gates in three-qubit quantum dot spin systems

Decoherence of Coupled Josephson Charge Qubits Due to Partially Correlated Low-Frequency Noise

Fermion-parity qubit in a proximitized double quantum dot

Decoherence of electron spin qubit during transfer between two semiconductor quantum dots at low magnetic fields

Flux-tunable hybridization in a double quantum dot interferometer

Theory of charge stability diagrams in coupled quantum dot qubits