Abstract:The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

Noise Correlations in a 1D Silicon Spin Qubit Array

Spatio-temporal correlations of noise in MOS spin qubits

Correlated Charge Noise and Relaxation Errors in Superconducting Qubits

The origins of noise in the Zeeman splitting of spin qubits in natural-silicon devices

Dephasing of Si spin qubits due to charge noise

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Coherent electron transport in silicon quantum dots

Spatially correlated classical and quantum noise in driven qubits: The good, the bad, and the ugly

Passive and active suppression of transduced noise in silicon spin qubits

Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Phonon downconversion to suppress correlated errors in superconducting qubits

Suppressing Correlated Noise in Quantum Computers via Context-Aware Compiling

Synchronous Detection of Cosmic Rays and Correlated Errors in Superconducting Qubit Arrays

Reducing charge noise in quantum dots by using thin silicon quantum wells

Effects of correlated magnetic noises from shared control lines on two-qubit gate

Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon-Germanium Quantum Dot Qubits

Low charge noise quantum dots with industrial CMOS manufacturing

Learning correlated noise in a 39-qubit quantum processor

Bounds to electron spin qubit variability for scalable CMOS architectures