A Lightweight Method of Metadata and Data Management with DataNet

D. Harezlak,Marek Kasztelnik,Maciej Pawlik,Bartosz Wilk,M. Bubak

DOI: https://doi.org/10.1007/978-3-319-10894-0_12

2014-07-01

Abstract:

What problem does this paper attempt to address?

Dangling bonds as possible contributors to charge noise in silicon and silicon-germanium quantum dot qubits

Joel B. Varley,Keith G. Ray,Vincenzo Lordi

2023-06-10

Abstract:Spin qubits based on Si and Si$_{1-x}$Ge$_{x}$ quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities. Identifying the origins of these charge fluctuations is therefore a critical step toward improving Si quantum-dot-based qubits. Here we use hybrid functional calculations to investigate possible atomistic sources of charge noise, focusing on charge trapping at Si and Ge dangling bonds (DBs). We evaluate the role of global and local environment in the defect levels associated with DBs in Si, Ge, and \sige alloys, and consider their trapping and excitation energies within the framework of configuration coordinate diagrams. We additionally consider the influence of strain and oxidation in charge-trapping energetics by analyzing Si and Ge$_{\rm Si}$ DBs in SiO$_2$ and strained Si layers in typical \sige quantum dot heterostructures. Our results identify that Ge dangling bonds are more problematic charge-trapping centers both in typical \sige alloys and associated oxidation layers, and they may be exacerbated by compositional inhomogeneities. These results suggest the importance of alloy homogeneity and possible passivation schemes for DBs in Si-based quantum dot qubits and are of general relevance to mitigating possible trap levels in other Si, Ge, and Si$_{1-x}$Ge$_{x}$-based metal-oxide-semiconductor stacks and related devices.

Materials Science
Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures

L. Massai,B. Hetényi,M. Mergenthaler,F.J. Schupp,L. Sommer,S. Paredes,S.W. Bedell,P. Harvey-Collard,G. Salis,A. Fuhrer,N.W. Hendrickx

2023-10-10

Abstract:Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with reduced hyperfine or charge noise sensitivity, the latter ultimately limits coherence, underlining the importance of understanding and reducing charge noise at its source. In this work, we study the voltage-induced hysteresis commonly observed in SiGe-based quantum devices and show that the dominant charge fluctuators are localized at the semiconductor-oxide interface. By applying increasingly negative gate voltages to Hall bar and quantum dot devices, we investigate how the hysteretic filling of interface traps impacts transport metrics and charge noise. We find that the gate-induced accumulation and trapping of charge at the SiGe-oxide interface leads to an increased electrostatic disorder, as probed by transport measurements, as well as the activation of low-frequency relaxation dynamics, resulting in slow drifts and increased charge noise levels. Our results highlight the importance of a conservative device tuning strategy and reveal the critical role of the semiconductor-oxide interface in SiGe heterostructures for spin qubit applications.

Mesoscale and Nanoscale Physics
Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Adam Bermeister,Daniel Keith,Dimitrie Culcer

DOI: https://doi.org/10.48550/arXiv.1408.4123

2014-11-13

Abstract:Spin-orbit coupling is ubiquitous in quantum dot quantum computing architectures, and makes spin qubits susceptible to charge noise. We derive a Hamiltonian describing the effect of spin-orbit and noise on a single-spin qubit in a quantum dot. Relaxation is due to noise coupling different orbital levels and is dominated by screened whole charge defects near the dot. Dephasing stems from noise causing relative fluctuations between orbital levels, and is driven by screened whole charge defects and unscreened dipole defects in the substrate. Dephasing times are vastly different between common materials such as Si and GaAs. They can be enhanced by increasing gate fields, choosing materials with weak spin-orbit such as Si, making dots narrower, or using accumulation dots.

Mesoscale and Nanoscale Physics
Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

M. Mohamed El Kordy Shehata,George Simion,Ruoyu Li,Fahd A. Mohiyaddin,Danny Wan,Massimo Mongillo,Bogdan Govoreanu,Iuliana Radu,Kristiaan De Greve,Pol Van Dorpe

DOI: https://doi.org/10.1103/PhysRevB.108.045305

2023-08-22

Abstract:The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

Mesoscale and Nanoscale Physics,Quantum Physics
Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures

Leonardo Massai,Bence Hetényi,Matthias Mergenthaler,Felix J Schupp,Lisa Sommer,Stephan Paredes,Stephen W Bedell,Patrick Harvey-Collard,Gian Salis,Andreas Fuhrer,Nico W Hendrickx

DOI: https://doi.org/10.1038/s43246-024-00563-8

Abstract:Hole spins in Ge/SiGe heterostructures have emerged as an interesting qubit platform with favourable properties such as fast electrical control and noise-resilient operation at sweet spots. However, commonly observed gate-induced electrostatic disorder, drifts, and hysteresis hinder reproducible tune-up of SiGe-based quantum dot arrays. Here, we study Hall bar and quantum dot devices fabricated on Ge/SiGe heterostructures and present a consistent model for the origin of gate hysteresis and its impact on transport metrics and charge noise. As we push the accumulation voltages more negative, we observe non-monotonous changes in the low-density transport metrics, attributed to the induced gradual filling of a spatially varying density of charge traps at the SiGe-oxide interface. With each gate voltage push, we find local activation of a transient low-frequency charge noise component that completely vanishes again after 30 hours. Our results highlight the resilience of the SiGe material platform to interface-trap-induced disorder and noise and pave the way for reproducible tuning of larger multi-dot systems.
Reducing charge noise in quantum dots by using thin silicon quantum wells

B. Paquelet Wuetz,D. Degli Esposti,A. M. J. Zwerver,S. V. Amitonov,M. Botifoll,J. Arbiol,A. Sammak,L. M. K. Vandersypen,M. Russ,G. Scappucci

DOI: https://doi.org/10.1038/s41467-023-36951-w

2022-09-15

Abstract:Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a $^{28}$Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopic Hall bars. In 5 nm thick $^{28}$Si quantum wells, we find that improvements in the scattering properties and uniformity of the two-dimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0.29$\pm$0.02 $\mu$eV/sqrt(Hz) at 1 Hz averaged over several quantum dots. We extrapolate the measured charge noise to simulated dephasing times to cz-gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system.

Mesoscale and Nanoscale Physics
Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot

Marcin Kępa,Łukasz Cywiński,Jan A. Krzywda

DOI: https://doi.org/10.1063/5.0156358

2024-08-08

Abstract:Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of electron's spin splitting. The resulting spin dephasing due to charge noise limits the coherence times of spin qubits in isotopically purified Si/SiGe quantum dots. We investigate the spin splitting noise caused by such process caused by microscopic motion of charges at the semiconductor-oxide interface. We compare effects of isotropic and planar displacement of the charges, and estimate their densities and typical displacement magnitudes that can reproduce experimentally observed spin splitting noise spectra. We predict that for defect density of $10^{10}$ cm$^{-2}$, visible correlations between noises in spin splitting and in energy of electron's ground state in the quantum dot, are expected.

Mesoscale and Nanoscale Physics
Characterization of individual charge fluctuators in Si/SiGe quantum dots

Feiyang Ye,Ammar Ellaboudy,Dylan Albrecht,Rohith Vudatha,N. Tobias Jacobson,John M. Nichol

2024-01-26

Abstract:Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge noise in the semiconductor environment still hinders further improvements. Despite the importance of charge noise, key questions about the specific nature of the fluctuators that cause charge noise remain unanswered. Here, we probe individual two-level fluctuators (TLFs) in Si/SiGe quantum dots through simple quantum-dot transport measurement and analyses based on the Allan variance and factorial hidden Markov modeling. We find that the TLF switching times depend sensitively on gate voltages, decrease with temperature, and depend on the current through a nearby quantum dot. A model for the data of the primary TLF we study indicates that it may be a bistable charge dipole near the plunger gate electrode, heated by current through the sensor dot, and experiencing state transitions driven not by direct electron-phonon coupling but through some other mechanism such as coupling to electrons passing through the sensor dot.

Mesoscale and Nanoscale Physics,Quantum Physics
Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise

Hamza Jnane,Simon C Benjamin

2024-03-01

Abstract:Electron spins in semiconductor devices are highly promising building blocks for quantum processors (QPs). Commercial semiconductor foundries can create QPs using the same processes employed for conventional chips, once the QP design is suitably specified. There is a vast accessible design space; to identify the most promising options for fabrication, one requires predictive modeling of interacting electrons in real geometries and complex non-ideal environments. In this work we explore a modelling method based on real-space grids, an ab initio approach without assumptions relating to device topology and therefore with wide applicability. Given an electrode geometry, we determine the exchange coupling between quantum dot qubits, and model the full evolution of a $\sqrt{\text{SWAP}}$ gate to predict qubit loss and infidelity rates for various voltage profiles. Moreover we explore the impact of unwanted charge defects (static and dynamic) in the environment, and test robust pulse sequences. As an example we exhibit a sequence correcting both systematic errors and (unknown) charge defects, observing an order of magnitude boost in fidelity. The technique can thus identify the most promising device designs for fabrication, as well as bespoke control sequences for each such device.

Mesoscale and Nanoscale Physics,Quantum Physics
Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment

X. G. Croot,S. J. Pauka,M. C. Jarratt,H. Lu,A. C. Gossard,J. D. Watson,G. C. Gardner,S. Fallahi,M. J. Manfra,D. J. Reilly

DOI: https://doi.org/10.1103/physrevapplied.11.064027

IF: 4.6

2017-01-01

Physical Review Applied

Abstract:We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and their readout sensors. Configuring a quantum point contact (QPC) as a localized emitter, we show how these charge pockets are activated by the relaxation of electrons tunneling through a barrier. The presence of charge pockets creates uncontrolled offsets in gate-bias and their thermal activation by on-chip tunnel currents suggests further sources of charge-noise that lead to decoherence in semiconductor qubits.
Noise Correlations in a 1D Silicon Spin Qubit Array

M.B. Donnelly,J. Rowlands,L. Kranz,Y.L. Hsueh,Y. Chung,A.V. Timofeev,H. Geng,P. Singh-Gregory,S.K. Gorman,J.G. Keizer,R. Rahman,M.Y. Simmons

2024-05-07

Abstract:Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors. The recent discovery of spatially dependent correlated noise in multi-qubit architectures of superconducting qubits arising from the impact of cosmic radiation and high-energy particles giving rise to quasiparticle poisoning within the substrate has led to intense investigations of mitigation strategies to address this. In contrast correlated noise in semiconductor spin qubits as a function of distance has not been reported to date. Here we report the magnitude, frequency and spatial dependence of noise correlations between four silicon quantum dot pairs as a function of inter-dot distance at frequencies from 0.3mHz to 1mHz. We find the magnitude of charge noise correlations, quantified by the magnitude square coherence $C_{xy}$, are significantly suppressed from $>0.5$ to $<0.1$ as the inter-dot distance increases from 75nm to 300nm. Using an analytical model we confirm that, in contrast to superconducting qubits, the dominant source of correlated noise arises from low frequency charge noise from the presence of two level fluctuators (TLFs) at the native silicon-silicon dioxide surface. Knowing this, we conclude with an important and timely discussion of charge noise mitigation strategies.

Mesoscale and Nanoscale Physics
Coherent electron transport in silicon quantum dots

Xinyu Zhao,Xuedong Hu

DOI: https://doi.org/10.48550/arXiv.1803.00749

2019-08-01

Abstract:With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon double quantum dot. We first examine the valley-orbital dynamics in a silicon double dot, and discuss how to properly measure the tunnel couplings as well as the valley phase difference between two quantum dots. We then focus on possible phase and spin flip errors during spin transport across a silicon double dot. In particular, we clarify correction on the effective $g$-factor for the electron spin from the double dot confinement potential, and quantify the resulting phase error. We then study spin fidelity loss due to spin-valley mixing, which is a unique feature of silicon quantum dots. We show that a small phase correction between valleys can cause a significant coherence loss. We also investigate spin flip errors caused by either an external inhomogeneous magnetic field or the intrinsic spin-orbit coupling. We show that the presence of valleys makes it possible to have much broader (in terms of interdot detuning) level anti-crossings compared to typical anti-crossings in, for example, a GaAs double dot, and such broad anti-crossings lead to amplification of spin flip errors. Lastly, we design a pulse sequence to suppress various possible spin flip errors by taking advantage of the multiple level anti-crossings in a silicon double dot and employing Landau-Zener transitions.

Mesoscale and Nanoscale Physics,Quantum Physics
Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability

Rifat Ferdous,Kok W. Chan,Menno Veldhorst,J.C.C. Hwang,C. H. Yang,Gerhard Klimeck,Andrea Morello,Andrew S. Dzurak,Rajib Rahman

DOI: https://doi.org/10.1103/PhysRevB.97.241401

2017-08-03

Abstract:We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that the g-factors and their Stark shifts undergo variations due to these steps. We compare our theoretical predictions with experiments on QDs at a Si/SiO$_2$ interface, in which we observe significant differences in Stark shifts between QDs in two different samples. We also experimentally observe variations in the $g$-factors of one-electron and three-electron spin qubits realized in three neighboring QDs on the same sample, at a level consistent with our calculations. The dephasing times of these qubits also vary, most likely due to their varying sensitivity to charge noise, resulting from different interface conditions. More importantly, from our calculations we show that by employing the anisotropic nature of the spin-orbit interaction (SOI) in a Si QD, we can minimize and control these variations. Ultimately, we predict that the dephasing times of the Si QD spin qubits will be anisotropic and can be improved by at least an order of magnitude, by aligning the external DC magnetic field towards specific crystal directions.

Quantum Physics
Simulating Charged Defects in Silicon Dangling Bond Logic Systems to Evaluate Logic Robustness

Samuel S. H. Ng,Jeremiah Croshaw,Marcel Walter,Robert Wille,Robert Wolkow,Konrad Walus

2023-08-08

Abstract:Recent research interest in emerging logic systems based on quantum dots has been sparked by the experimental demonstration of nanometer-scale logic devices composed of atomically sized quantum dots made of silicon dangling bonds (SiDBs), along with the availability of SiQAD, a computer-aided design tool designed for this technology. Latest design automation frameworks have enabled the synthesis of SiDB circuits that reach the size of $32\times10^3\,\text{nm}^{2}$ -- orders of magnitude more complex than their hand-designed counterparts. However, current SiDB simulation engines do not take defects into account, which is important to consider for these sizable systems. This work proposes a formulation for incorporating fixed-charge simulation into established ground state models to cover an important class of defects that has a non-negligible effect on nearby SiDBs at the $10\,\text{nm}$ scale and beyond. The formulation is validated by implementing it into SiQAD's simulation engine and computationally reproducing experiments on multiple defect types, revealing a high level of accuracy. The new capability is applied towards studying the tolerance of several established logic gates against the introduction of a single nearby defect to establish the corresponding minimum required clearance. These findings are compared against existing metrics to form a foundation for logic robustness studies.

Mesoscale and Nanoscale Physics
The Effect of Surface Conductance on Lateral Gated Quantum Devices in Si/Sige Heterostructures

Xi Lin,Jingshi Hu,Andrew P. Lai,Zhenning Zhang,Kenneth MacLean,Colin Dillard,Ya-Hong Xie,Marc A. Kastner

DOI: https://doi.org/10.1063/1.3610524

IF: 2.877

2011-01-01

Journal of Applied Physics

Abstract:Quantum dots in Si/SiGe heterostructures are expected to have relatively long electron spin decoherence times, because of the low density of nuclear spins and the weak coupling between nuclear and electron spins. We provide experimental evidence suggesting that electron motion in a conductive layer parallel to the two-dimensional electron gas, possibly resulting from the donors used to dope the Si quantum well, is responsible for the well-known difficulty in achieving well-controlled dots in this system. Charge motion in the conductive layer can cause depletion on large length scales, making electron confinement in the dot impossible, and can give rise to noise that can overwhelm the single-electron charging signal. Results of capacitance versus gate bias measurements to characterize this conductive layer are presented.
Optimizing surface defects for atomic-scale electronics: Si dangling bonds

Peter Scherpelz,Giulia Galli

DOI: https://doi.org/10.1103/PhysRevMaterials.1.021602

2017-07-26

Abstract:Surface defects created and probed with scanning tunneling microscopes are a promising platform for atomic-scale electronics and quantum information technology applications. Using first-principles calculations we demonstrate how to engineer dangling bond (DB) defects on hydrogenated Si(100) surfaces, which give rise to isolated impurity states that can be used in atomic-scale devices. In particular we show that sample thickness and biaxial strain can serve as control parameters to design the electronic properties of DB defects. While in thick Si samples the neutral DB state is resonant with bulk valence bands, ultrathin samples (1-2 nm) lead to an isolated impurity state in the gap; similar behavior is seen for DB pairs and DB wires. Strain further isolates the DB from the valence band, with the response to strain heavily dependent on sample thickness. These findings suggest new methods for tuning the properties of defects on surfaces for electronic and quantum information applications. Finally, we present a consistent and unifying interpretation of many results presented in the literature for DB defects on hydrogenated silicon surfaces, rationalizing apparent discrepancies between different experiments and simulations.

Materials Science,Mesoscale and Nanoscale Physics
Simulated Charge Stability in a MOSFET Linear Quantum Dot Array

Zach D. Merino,Bohdan Khromets,Jonathan Baugh

2024-02-24

Abstract:In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a realistic double QD device geometry. These methods generaize to linear QD arrays, and are based on determining the effective parameters of a Hubbard model Hamiltonian that is then diagonalized to find the many-electron ground state energy. These calculations enable the identification of gate voltage ranges that maintain desired charge states during qubit manipulation, and also account for electrical cross-talk between QDs. As a result, the methods presented here promise to be a valuable tool for developing scalable spin qubit quantum processors.

Mesoscale and Nanoscale Physics
Quantum dot arrays in silicon and germanium

W. I. L. Lawrie,H. G. J. Eenink,N. W. Hendrickx,J. M. Boter,L. Petit,S. V. Amitonov,M. Lodari,B. Paquelet Wuetz,C. Volk,S. G. J. Philips,G. Droulers,N. Kalhor,F. van Riggelen,D. Brousse,A. Sammak,L. M. K. Vandersypen,G. Scappucci,M. Veldhorst

DOI: https://doi.org/10.1063/5.0002013

IF: 4

2020-02-24

Applied Physics Letters

Abstract:Electrons and holes confined in quantum dots define excellent building blocks for quantum emergence, simulation, and computation. Silicon and germanium are compatible with standard semiconductor manufacturing and contain stable isotopes with zero nuclear spin, thereby serving as excellent hosts for spins with long quantum coherence. Here, we demonstrate quantum dot arrays in a silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe), and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make an Ohmic contact to metals, the overlapping gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N + 1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive crosstalk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. We put these results into perspective for quantum technology and identify industrial qubits, hybrid technology, automated tuning, and two-dimensional qubit arrays as four key trajectories that, when combined, enable fault-tolerant quantum computation.

physics, applied
Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure

Marcin Kępa,Niels Focke,Łukasz Cywiński,Jan. A. Krzywda

DOI: https://doi.org/10.1063/5.0151029

2024-08-08

Abstract:Due to presence of magnetic field gradient needed for coherent spin control, dephasing of single-electron spin qubits in silicon quantum dots is often dominated by $1/f$ charge noise. We investigate theoretically fluctuations of ground state energy of an electron in gated quantum dot in realistic Si/SiGe structure. We assume that the charge noise is caused by motion of charges trapped at the semiconductor-oxide interface. We consider a realistic range of trapped charge densities, $\rho \! \sim \! 10^{10}$ cm$^{-2}$, and typical lenghtscales of isotropically distributed displacements of these charges, $\delta r \! \leq \! 1$ nm, and identify pairs $(\rho,\delta r)$ for which the amplitude and shape of the noise spectrum is in good agreement with spectra reconstructed in recent experiments on similar structures.

Mesoscale and Nanoscale Physics,Quantum Physics

A Lightweight Method of Metadata and Data Management with DataNet

Dangling bonds as possible contributors to charge noise in silicon and silicon-germanium quantum dot qubits

Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures

Reducing charge noise in quantum dots by using thin silicon quantum wells

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot

Characterization of individual charge fluctuators in Si/SiGe quantum dots

Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise

Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment

Noise Correlations in a 1D Silicon Spin Qubit Array

Coherent electron transport in silicon quantum dots

Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability

Simulating Charged Defects in Silicon Dangling Bond Logic Systems to Evaluate Logic Robustness

The Effect of Surface Conductance on Lateral Gated Quantum Devices in Si/Sige Heterostructures

Optimizing surface defects for atomic-scale electronics: Si dangling bonds

Simulated Charge Stability in a MOSFET Linear Quantum Dot Array

Quantum dot arrays in silicon and germanium

Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure