Abstract:The implementation of a quantum computer requires a qubit-specific measurement capability to read-out the final state of a quantum system. The model of spin dependent tunneling followed by charge readout has been highly successful in enabling spin qubit experiments in all-electrical, semiconductor based quantum computing. As experiments grow more sophisticated, and head towards multiple qubit architectures that enable small scale computation, it becomes important to consider the charge read-out overhead. With this in mind, Reilly et al. demonstrated a gate readout scheme in a GaAs double quantum dot that removed the need for an external charge sensor. This readout, which achieved sensitivities of order me/$\sqrt(Hz)$, was enabled by using a resonant circuit to probe the complex radio-frequency polarisability of the double quantum dot. However, the ultimate performance of this technology and the noise sources that limit it remain to be determined. Here, we investigate a gate-based readout scheme using a radio-frequency resonant circuit strongly coupled to a double quantum at the corner states of a silicon nanowire transistor. We find a significantly improved charge sensitivity of 37 $\mu$e/$\sqrt(Hz)$. By solving the dynamical master equation of the fast-driven electronic transitions we quantify the noise spectral density and determine the ultimate charge and phase sensitivity of gate-based read-out. We find comparable performance to conventional charge sensors and fundamental limits of order ne/$\sqrt(Hz)$ and $\mu$rad/$\sqrt(Hz)$, with the gate-based sensor improving on standard detection for certain device parameters. Our results show that, especially in state-of-the-art silicon qubit architectures, charge detection by probing the complex polarisability has advantages in terms of reducing the readout overhead but also in terms of the absolute charge sensitivity.

Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment

A high-sensitivity gate-based charge sensor in silicon

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Multiple-Gate FET Quantum Dot Behavior and a Proximity Charge Sensing Model

The Effect of Surface Conductance on Lateral Gated Quantum Devices in Si/Sige Heterostructures

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Gate reflectometry in dense quantum dot arrays

Progress of Gate-Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Dispersive Readout of a Few-Electron Double Quantum Dot with Fast RF Gate Sensors.

Capacitive crosstalk in gate-based dispersive sensing of spin qubits

Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon-Germanium Quantum Dot Qubits

Quantized conductance in hybrid split-gate arrays of superconducting quantum point contacts with semiconducting two-dimensional electron systems

Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures

Quantized conductance in split gate superconducting quantum point contacts with InGaAs semiconducting two-dimensional electron systems

Elongated quantum dot as a distributed charge sensor

Gate modulation of the hole singlet-triplet qubit frequency in germanium

Preserving Coulomb blockade in transport spectroscopy of quantum dots, by dynamical tunnel-barrier compensation

Circuit-QED based time-averaged dispersive readout of a semiconductor charge qubit