Abstract:The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

Do micromagnets expose spin qubits to charge and Johnson noise?

Low dephasing and robust micromagnet designs for silicon spin qubits

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Dephasing of Si spin qubits due to charge noise

Electron Spin Relaxation Due to Charge Noise

Leakage-induced Decoherence During Single Electron Spin Manipulation in a Double Quantum Dot

The origins of noise in the Zeeman splitting of spin qubits in natural-silicon devices

Fast Spin-Valley-based Quantum Gates in Si with Micromagnets

Charged-Impurity-Induced Dephasing Of A Voltage-Controlled Coded Qubit Based On Electron Spin In A Triple Quantum Dot

Robust Micromagnet Design for Fast Electrical Manipulations of Single Spins in Quantum Dots

Charge-noise induced dephasing in silicon hole-spin qubits

Noise Correlations in a 1D Silicon Spin Qubit Array

Leakage and dephasing in $^{28}$Si-based exchange-only spin qubits

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Passive and active suppression of transduced noise in silicon spin qubits

Charge-induced energy shift of a single-spin qubit under a magnetic-field gradient

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure

Spin manipulation and decoherence in a quantum dot mediated by a synthetic spin-orbit coupling of broken <i>T</i>-symmetry

On-demand electrical control of spin qubits

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot