Samuel Neyens,Otto K. Zietz,Thomas F. Watson,Florian Luthi,Aditi Nethwewala,Hubert C. George,Eric Henry,Mohammad Islam,Andrew J. Wagner,Felix Borjans,Elliot J. Connors,J. Corrigan,Matthew J. Curry,Daniel Keith,Roza Kotlyar,Lester F. Lampert,Mateusz T. Madzik,Kent Millard,Fahd A. Mohiyaddin,Stefano Pellerano,Ravi Pillarisetty,Mick Ramsey,Rostyslav Savytskyy,Simon Schaal,Guoji Zheng,Joshua Ziegler,Nathaniel C. Bishop,Stephanie Bojarski,Jeanette Roberts,James S. Clarke

Abstract:Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices.

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

Spin Qubits with Scalable milli-kelvin CMOS Control

A CMOS silicon spin qubit

On-demand electrical control of spin qubits

Low dephasing and robust micromagnet designs for silicon spin qubits

Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays

Fast Spin-Valley-based Quantum Gates in Si with Micromagnets

Direct manipulation of a superconducting spin qubit strongly coupled to a transmon qubit

Low charge noise quantum dots with industrial CMOS manufacturing

Bounds to electron spin qubit variability for scalable CMOS architectures

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

CMOS compatibility of semiconductor spin qubits

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Exchange control in a MOS double quantum dot made using a 300 mm wafer process

Probing single electrons across 300 mm spin qubit wafers

A spinless spin qubit

An electrically driven spin qubit based on valley mixing

Electrical Control of Coherent Spin Rotation of a Single-Spin Qubit

Silicon CMOS architecture for a spin-based quantum computer

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Robust Micromagnet Design for Fast Electrical Manipulations of Single Spins in Quantum Dots