Abstract:For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proof of concepts. Once the process is established it can be incorporated in the foundry-compatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric field and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is how to achieve electrical manipulation of single - electron - spin qubits on the complementary metal - oxide - semiconductor (CMOS) technology platform. Specifically, the authors achieve this goal by integrating micromagnets on CMOS devices and using spin - valley coupling. The following are the main research problems and solutions in the paper: ### Research Background and Problems 1. **Applications of CMOS Technology** - CMOS technology is an ideal choice for constructing high - quality spin - qubit devices, with reliability and scalability. - It is very difficult to directly transition from academic - level manufacturing to qubit manufacturing that fully complies with industrial CMOS standards, and intermediate solutions are required. 2. **Electrical Manipulation of Single - Electron Spins** - Traditional spin - manipulation methods rely on external magnetic fields or microwave fields, while electrical manipulation can provide a more compact and efficient solution. - Electric - dipole - spin resonance (EDSR) is a technique for controlling spins by electric fields, but its application on the CMOS platform still faces challenges. ### Solutions and Innovations 1. **Micromagnet Integration** - Micromagnets are integrated in the back - end - of - line (BEOL) of CMOS devices to generate local magnetic field gradients, thereby enhancing the effect of spin manipulation. - The introduction of micromagnets enables effective spin manipulation in a relatively small space while maintaining the compatibility of the CMOS process. 2. **Utilization of Spin - Valley Coupling** - Synthetic spin - orbit coupling (SOC) is used to drive qubits by electric fields. - The influence of spin - valley mixing on spin manipulation is explored, and it is found that the Rabi frequency at the spin - valley hot spot is significantly enhanced. 3. **Analysis of Noise Sources** - Dynamic decoupling pulse sequences are used to explore high - frequency noise sources, proving that charge noise dominates the decoherence of qubits. - The analysis shows that although the amplitude of charge noise is relatively high, due to the strong confinement effect at the corners of the nanowire, the influence of decoherence at high frequencies is relatively small. ### Experimental Results and Conclusions - Electrical manipulation of single - electron - spin qubits has been successfully achieved, and two EDSR mechanisms are demonstrated: one based on pure synthetic SOC and the other based on the combination of spin - valley mixing. - Measurement results show that the decoherence time of qubits is approximately 500 nanoseconds, which is mainly caused by hyperfine interactions. - The dynamic decoupling pulse sequence increases the coherence time of qubits by three orders of magnitude and confirms that high - frequency noise has an electrical origin. ### Formula Summary - **Larmor Frequency** \[ f_0=\frac{g\mu_B B_z}{h} \] where \( g = 2 \) is the g - factor in silicon, \( \mu_B \) is the Bohr magneton, \( B_z \) is the magnetic field component along the z - axis, and \( h \) is the Planck constant. - **Rabi Frequency** \[ \omega_R=\frac{\mu_0 m}{4\pi}\left(\frac{2\cos(\theta)-\vec{r}}{r^3}+\frac{\sin(\theta)-\vec{\theta}}{r^3}\right) \] - **Decoherence Time** \[ T_2^*=\frac{1}{\sqrt{\langle\Delta\phi^2\rangle/t}} \] where \( \langle\Delta\phi^2\rangle \) is the variance of phase fluctuations. ### Summary This paper shows how to achieve electrical manipulation of single - electron - spin qubits by integrating micromagnets on the CMOS platform and using spin - valley coupling, solving the problem that traditional methods are difficult to achieve efficient spin manipulation under industrial CMOS standards. At the same time, through a detailed analysis of noise sources, it provides a theoretical basis for further optimizing qubit performance.

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

Spin Qubits with Scalable milli-kelvin CMOS Control

A CMOS silicon spin qubit

Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays

Direct manipulation of a superconducting spin qubit strongly coupled to a transmon qubit

Low charge noise quantum dots with industrial CMOS manufacturing

Bounds to electron spin qubit variability for scalable CMOS architectures

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

CMOS compatibility of semiconductor spin qubits

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Exchange control in a MOS double quantum dot made using a 300 mm wafer process

Probing single electrons across 300 mm spin qubit wafers

Controlling a Nanowire Spin-Orbit Qubit Via Electric-Dipole Spin Resonance

Electrical Control of Coherent Spin Rotation of a Single-Spin Qubit

Silicon CMOS architecture for a spin-based quantum computer

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Robust Micromagnet Design for Fast Electrical Manipulations of Single Spins in Quantum Dots

Spin-orbit coupling and operation of multi-valley spin qubits

Efficient driving of a spin-qubit using single-atom magnets

All-electrical operation of a spin qubit coupled to a high-Q resonator

Silicon Spin Qubit Control and Readout Circuits in 22nm FDSOI CMOS