Abstract:Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, disrupt this analogy between atoms and quantum dots, so that real devices seldom display such a systematic many-electron arrangement. We demonstrate here an electrostatically-defined quantum dot that is robust to disorder, revealing a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. We explore various fillings consisting of a single valence electron -- namely 1, 5, 13 and 25 electrons -- as potential qubits, and we identify fillings that yield a total spin-1 on the dot. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR). Higher shell states are shown to be more susceptible to the driving field, leading to faster Rabi rotations of the qubit. We investigate the impact of orbital excitations of the p- and d-shell electrons on single qubits as a function of the dot deformation. This allows us to tune the dot excitation spectrum and exploit it for faster qubit control. Furthermore, hotspots arising from this tunable energy level structure provide a pathway towards fast spin initialisation. The observation of spin-1 states may be exploited in the future to study symmetry-protected topological states in antiferromagnetic spin chains and their application to quantum computing.

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Controlling a Nanowire Spin-Orbit Qubit Via Electric-Dipole Spin Resonance

Determination of the spin-orbit coupling in a nanowire via electric-dipole spin resonance

Spin-orbit Coupling and Electric-Dipole Spin Resonance in a Nanowire Double Quantum Dot

An electrically driven spin qubit based on valley mixing

Electric field dependence of spin qubit in a Si-MOS quantum dot

Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Measurement of Enhanced Spin‐Orbit Coupling Strength for Donor‐Bound Electron Spins in Silicon

Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field

Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon

Entanglement of Spin-Orbit Qubits Induced by Coulomb Interaction

Anisotropic Exchange Coupling in A Nanowire Double Quantum Dot with Strong Spin-Orbit Coupling

Single-electron spin resonance in a nanoelectronic device using a global field

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

A CMOS silicon spin qubit

Electrical readout of spins in the absence of spin blockade

Non-symmetric Pauli spin blockade in a silicon double quantum dot

Fast Spin-Valley-based Quantum Gates in Si with Micromagnets

Coherent electron transport in silicon quantum dots