Exchange control in a MOS double quantum dot made using a 300 mm wafer process

Jacob F. Chittock-Wood,Ross C. C. Leon,Michael A. Fogarty,Tara Murphy,Sofia M. Patomäki,Giovanni A. Oakes,Felix-Ekkehard von Horstig,Nathan Johnson,Julien Jussot,Stefan Kubicek,Bogdan Govoreanu,David F. Wise,M. Fernando Gonzalez-Zalba,John J. L. Morton
2024-08-11
Abstract:Leveraging the advanced manufacturing capabilities of the semiconductor industry promises to help scale up silicon-based quantum processors by increasing yield, uniformity and integration. Recent studies of quantum dots fabricated on 300 mm wafer metal-oxide-semiconductor (MOS) processes have shown control and readout of individual spin qubits, yet quantum processors require two-qubit interactions to operate. Here, we use a 300 mm wafer MOS process customized for spin qubits and demonstrate coherent control of two electron spins using the spin-spin exchange interaction, forming the basis of an entangling gate such as $\sqrt{\text{SWAP}}$. We observe gate dephasing times of up to $T_2^{*}\approx500$ ns and a gate quality factor of 10. We further extend the coherence by up to an order of magnitude using an echo sequence. For readout, we introduce a dispersive readout technique, the radiofrequency electron cascade, that amplifies the signal while retaining the spin-projective nature of dispersive measurements. Our results demonstrate an industrial grade platform for two-qubit operations, alongside integration with dispersive sensing techniques.
Mesoscale and Nanoscale Physics,Quantum Physics
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