Abstract:The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

Spin Decoherence in a Two-Qubit CPHASE Gate: the Critical Role of Tunneling Noise

Critical role of tunneling fluctuation on spin decoherence in a two-qubit gate

Controlled phase gate in exchange coupled quantum dots affected by quasistatic charge noise

Dephasing of Si spin qubits due to charge noise

Leakage-induced Decoherence During Single Electron Spin Manipulation in a Double Quantum Dot

Geometric phases in semiconductor spin qubits: Manipulations and decoherence

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Dephasing of planar Ge hole spin qubits due to 1/$\textit{f}$ charge noise

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Intrinsic And Extrinsic Decoherence For Charge Qubit Dynamics In A Double Quantum Dot

Decoherence for a Two-Qubit System in a Spin-Chain Environment

Improving Intrinsic Decoherence in Multi-Quantum-Dot Charge Qubits

Dephasing Noise Simulation for Coherence-Generating Devices

Dephasing Dynamics of Electron and Hole Spin Qubits in Self-Assembled Quantum Dots (conference Presentation)

Decoherence of Coupled Josephson Charge Qubits Due to Partially Correlated Low-Frequency Noise

Phonon Dephasing, Entanglement and Exchange-Only Toffoli Gate Sequence in Quantum Dot Spin Chains

Decoherence-Protected Spin-Photon Quantum Gates In A Hybrid Semiconductor-Superconductor Circuit

Quantum Logic Gates for Spin Cluster Qubits

Decoherence of solid-state spin qubits: a computational perspective

Entangling gates on degenerate spin qubits dressed by a global field

Electron Spin Relaxation Due to Charge Noise