Abstract:The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a co-modelling framework for double quantum dot (DQD) devices and their charge noise environment. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two- qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97% in the simulated Si-MOS devices at a typical TLF densities. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91% in the presence of the same density of TLFs. We further investigate the one- and two- qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities which can compromise the device yields in scaled qubit technologies.

Critical role of tunneling fluctuation on spin decoherence in a two-qubit gate

Spin Decoherence in a Two-Qubit CPHASE Gate: the Critical Role of Tunneling Noise

Dephasing of Si spin qubits due to charge noise

Leakage-induced Decoherence During Single Electron Spin Manipulation in a Double Quantum Dot

Controlled phase gate in exchange coupled quantum dots affected by quasistatic charge noise

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation

Impact of decoherence on the fidelity of quantum gates leaving the computational subspace

Electron Spin Relaxation Due to Charge Noise

Decoherence of electron spin qubit during transfer between two semiconductor quantum dots at low magnetic fields

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Geometric phases in semiconductor spin qubits: Manipulations and decoherence

Optimal control of a cavity-mediated iSWAP gate between silicon spin qubits

Quantum theory for electron spin decoherence induced by nuclear spin dynamics in semiconductor quantum computer architectures: Spectral diffusion of localized electron spins in the nuclear solid-state environment

Dephasing of planar Ge hole spin qubits due to 1/$\textit{f}$ charge noise

Intrinsic And Extrinsic Decoherence For Charge Qubit Dynamics In A Double Quantum Dot

Quantum dot-based high-fidelity universal quantum gates in noisy environment

Dynamic sweet spot of driven flopping-mode spin qubits in planar quantum dots

Passive and active suppression of transduced noise in silicon spin qubits

Geometric two-qubit gates in silicon-based double quantum dots

Effects of Temperature Fluctuations on Charge Noise in Quantum Dot Qubits

Study of Decoherence in Quantum Computers: A Circuit-Design Perspective