Abstract:Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing times $T_2^{echo}=128 \mu s$ and valley energy splittings around $200 \mu eV$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing towards the suppression of qubit decoherence through hyperfine interaction or via scattering between valley states. The concentration of nuclear spin-carrying $^{29}$Si is 50 ppm in the $^{28}$Si QW. APT allows to uncover that both the top SiGe/$^{28}$Si and the bottom $^{28}$Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment broadens the top interface by about two monolayers, while the width of the bottom interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of $0.3 \%$ in the QW, resulting from segregation, is instrumental for the observed large valley splitting. Minimal Ge additions $< 1 \%$, which get more likely in thin QWs, will hence support high valley splitting without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties.

Origin of giant valley splitting in silicon quantum wells induced by superlattice barriers

Lower Bound on the Spread of Valley Splitting in Si/SiGe Quantum Wells Induced by Atomic Rearrangement at the Interface

Genetic Design of Enhanced Valley Splitting Towards a Spin Qubit in Silicon.

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells

Valley splitting depending on the size and location of a silicon quantum dot

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Spin and valley-orbit splittings in SiGe/Si heterostructures

Valley splitting of single-electron Si MOS quantum dots

Interface and electromagnetic effects in the valley splitting of Si quantum dots

Low disorder and high valley splitting in silicon

Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells

Enormous Valley Splitting in Monolayer WS2 by Coupling with an N‐Terminated GaN Substrate

Ultrashallow Heavily Constrained Quantum Wells: the Cradle for Fully Electrically Controlled and Microwave Coupled Quantum Bits

Engineered valley-orbit splittings in quantum confined nanostructures in silicon

Progress of Gate-Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Mapping of valley splitting by conveyor-mode spin-coherent electron shuttling

Controllable Enormous Valley Splitting in Janus WSSe on CrN Monolayer

Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling