Spin and valley-orbit splittings in SiGe/Si heterostructures

M.O. Nestoklon,L.E. Golub,E.L. Ivchenko

DOI: https://doi.org/10.1103/PhysRevB.73.235334

2006-01-23

Abstract:Spin and valley-orbit splittings are calculated in SiGe/Si/SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with an odd number of Si atomic planes is microscopically demonstrated. The spin splitting oscillates with QW width and these oscillations related to the inter-valley reflection of an electron wave from the interfaces. It is shown that the splittings under study can efficiently be described by an extended envelope-function approach taking into account the spin- and valley-dependent interface mixing. The obtained results provide a theoretical base to the experimentally observed electron spin relaxation times in SiGe/Si/SiGe QWs.

Mesoscale and Nanoscale Physics,Disordered Systems and Neural Networks

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: in the SiGe/Si heterostructure, the mechanisms of spin splitting and valley - orbital splitting of electron states and their variation rules with the width of the quantum well (QW). Specifically, the authors hope to understand and calculate these splitting phenomena, especially how the spin splitting of electron states changes with the width of the quantum well in an ideal quantum well with an odd number of Si atomic layers. In addition, they also explore the influence of these splittings on the electron spin relaxation time.

### Summary of the main problems in the paper:

1. **Microscopic mechanism of spin splitting**:
- The authors use the tight - binding approach to study the spin splitting in SiGe/Si/SiGe quantum wells.
- Based on symmetry considerations, it is proved that there is spin splitting in a perfect quantum well with an odd number of Si atomic layers.
- The spin splitting oscillates with the width of the quantum well, and this oscillation is related to the inter - valley reflection of electron waves at the interface.

2. **Description of valley - orbital splitting**:
- Research shows that these splittings can be effectively described by the extended envelope - function approach, considering spin - and valley - dependent interface mixing.
- These results provide a theoretical basis for the experimentally observed electron spin relaxation time in SiGe/Si/SiGe quantum wells.

3. **Model verification**:
- Numerical calculations are carried out using the tight - binding model, and the results are compared with those of the analytical formula to verify the validity of the proposed theoretical model.
- By fitting parameters, it is found that the analytical theory is completely consistent with the tight - binding calculation results.

### Formula presentation

1. **Hamiltonian of spin splitting**:
\[
H^{(1)}(\mathbf{k}_{\parallel})=\alpha(\sigma_x k_x-\sigma_y k_y)
\]
where $\sigma_x$ and $\sigma_y$ are Pauli matrices, $\mathbf{k}_{\parallel}$ is a two - dimensional wave vector with components $k_x$ and $k_y$.

2. **Energy difference of spin splitting**:
\[
E_{e1,\pm}=\pm 2|\chi(L / 2)|^2\cdot|\lambda\cos(k_0 L-\phi_\lambda)|
\]
where $\chi(z)$ is an envelope function, $\lambda$ and $\phi_\lambda$ are the modulus and phase of the complex coefficient respectively.

3. **Coefficient of the linear $k$ - term**:
\[
\alpha_{\pm}=2|\chi(L / 2)|^2[S\pm|p|\eta\cos(k_0 L-\phi_p)]
\]
where $S$ and $p$ are coefficients of interface mixing, $\eta = \text{sign}\{\cos(k_0 L-\phi_\lambda)\}$.

### Conclusion

Through theoretical analysis and numerical simulation, this paper studies in detail the spin splitting and valley - orbital splitting of electron states in SiGe/Si heterostructures. The research results not only reveal the physical mechanisms of these splittings but also provide theoretical support for experimental observations.