Abstract:The valley splitting of the first few Landau levels is calculated as a function of the magnetic field for electrons confined in a strained silicon quantum well grown on a tilted SiGe substrate, using a parameterized tight-binding method. For a zero substrate tilt angle, the valley splitting slightly decreases with increasing magnetic field. In contrast, the valley splitting for a finite substrate tilt angle exhibits a strong and non-monotonous dependence on the magnetic field strength. The valley splitting of the first Landau level shows an exponential increase followed by a slow saturation as the magnetic field strength increases. The valley splitting of the second and third Landau levels shows an oscillatory behavior. The non-monotonous dependence is explained by the phase variation of the Landau level wave function along the washboard-like interface between the tilted quantum well and the buffer material. The phase variation is the direct consequence of the misorientation between the crystal axis and the confinement direction of the quantum well. This result suggests that the magnitude of the valley splitting can be tuned by controlling the Landau-level filling factor through the magnetic field and the doping concentration.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to study how the valley splitting of electrons in a strained silicon quantum well (QW) grown on a tilted SiGe substrate depends on the applied magnetic field. Specifically, the author uses the parameterized tight - binding method to directly diagonalize the Hamiltonian for calculation, without relying on any perturbation theory or empirical parameters, to explore the non - monotonic dependence relationship between valley splitting and the magnetic field. ### Research Background and Problems 1. **Importance of Valley Splitting** - In two - dimensional electron gas systems, such as Si metal - oxide - semiconductor field - effect transistors (MOSFETs) or modulation - doped Si/SiGe heterostructures, valley splitting strongly depends on the magnetic field strength and the Landau level filling factor. - This dependence is attributed to multiple mechanisms, including crystal - axis misorientation, electron - exchange interaction, electric - breakdown mechanism, and surface scattering, etc. 2. **Deficiencies in Existing Research** - Although the effective - mass approximation method is widely used to study valley splitting in a magnetic field, its results are significantly different from the experimental data, especially the linear magnetic - field dependence of the first Landau level has not been simulated and verified. - Previous studies mostly used perturbation theory or introduced empirical parameters, lacking atomic - level calculations without these assumptions. 3. **Research Objectives of This Paper** - Using the parameterized tight - binding method, calculate the change of valley splitting with the magnetic field in a strained silicon quantum well in the absence of perturbation theory or empirical parameters. - Pay special attention to the valley splitting in the single - particle picture caused by the misorientation between the crystal axis and the confinement direction. ### Main Findings - **Behavior at Zero Inclination Angle** - When the substrate is not tilted, the valley splitting slightly decreases as the magnetic field increases. - **Behavior at a Finite Inclination Angle** - For a substrate with a tilt angle, the valley splitting shows a strong non - monotonic dependence. - The valley splitting of the first Landau level increases exponentially with the magnetic field and then slowly saturates. - The valley splitting of the second and third Landau levels exhibits oscillatory behavior. - **Explanation of Non - Monotonic Dependence** - The non - monotonic dependence is caused by the phase change of the Landau - level wave function along the "washboard - like interface". - The phase change is caused by the misorientation between the crystal axis and the quantum - well confinement direction. ### Potential Applications - **Regulation of Valley Splitting** - By controlling the Landau - level filling factor (for example, through the magnetic field and doping concentration), the magnitude of valley splitting can be adjusted. - This provides the possibility of designing devices with specific valley - splitting characteristics. ### Summary This paper has studied in detail the change of valley splitting with the magnetic field in a strained silicon quantum well through the parameterized tight - binding method, revealed its complex non - monotonic dependence, and proposed possible physical mechanisms. This research not only deepens the understanding of valley splitting but also provides a theoretical basis for the future design of quantum devices based on silicon - based materials.

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