Abstract:In a multi-valley electronic band structure, lifting of the valley degeneracy is associated with rotational symmetry breaking in the electronic fluid, and may emerge through spontaneous symmetry breaking order, or through a large response to a small external perturbation such as strain. In this work we use scanning tunneling microscopy to investigate an unexpected rotational symmetry breaking in Landau levels formed in the unusual floating surface band of ZrSiS. We visualize a ubiquitous splitting of Landau levels into valley-polarized sub-levels. We demonstrate methods to measure valley-selective Landau level spectroscopy, to infer unknown Landau level indices, and to precisely measure each valley's Berry phase in a way that is agnostic to the band structure and topology of the system. These techniques allow us to obtain each valley's dispersion curve and infer a rigid valley-dependent contribution to the band energies. Ruling out spontaneous symmetry breaking by establishing the sample-dependence of this valley splitting, we explain the effect in terms of residual strain. A quantitative estimate indicates that uniaxial strain can be measured to a precision of $ \lt 0.025 \% $. The extreme valley-polarization of the Landau levels results from as little as $ \sim 0.1 \% $ strain, and this suggests avenues for manipulation using deliberate strain engineering.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the valley - polarization phenomenon of Landau levels (LLs) observed in the floating surface band of ZrSiS material. Specifically, the authors used scanning tunneling microscopy (STM) to study that under the condition of applying a magnetic field, unexpected rotational symmetry breaking occurred in the LLs in the ZrSiS surface band, manifested as the splitting of LLs into valley - polarized sublevels. This phenomenon may be caused by residual strain rather than the result of spontaneous symmetry breaking. ### Main problems 1. **Origin of the valley - polarization phenomenon**: The paper explores whether the LLs valley - polarization phenomenon observed in the floating surface band of ZrSiS is caused by spontaneous symmetry breaking or external perturbations (such as strain). 2. **Effect of strain**: Through experiments and theoretical calculations, the paper attempts to quantify the specific effect of strain on the valley - polarization phenomenon and evaluate the accuracy of strain measurement. 3. **Valley - selective LL spectroscopy**: A method has been developed to measure the valley - selective LL spectrum in order to more accurately describe the energy - band dispersion curves and Berry phases of each valley. ### Specific research contents - **Experimental method**: High - resolution tunneling spectroscopy was used to study the LLs in the floating surface band of ZrSiS under a high magnetic field. - **Visualization of the valley - polarization phenomenon**: Through the imaging of quasiparticle interference patterns, the splitting of LLs into valley - polarized sublevels was observed. - **Valley - selective LL spectroscopy**: A new method was proposed to extract the valley - selective LL spectrum by sampling the local density of states at different positions within the unit cell. - **Determination of LL index and Berry phase**: Using the Lifshitz - Onsager quantization condition, the LL index and Berry phase were determined in a model - free manner. - **Determination of valley dispersion curves**: By fitting the relationship between LL energy and magnetic field, the energy - band dispersion curves of each valley were determined. ### Main conclusions - **Explanation of the valley - polarization phenomenon**: By excluding the possibility of spontaneous symmetry breaking, the authors believe that the valley - polarization phenomenon is caused by residual strain. - **Quantification of strain**: Through theoretical calculations, the amount of strain required to cause the valley - polarization phenomenon was estimated to be approximately 0.1%. - **Application of valley - selective LL spectroscopy**: The developed method can be widely applied to multi - valley systems and is helpful for more accurately describing the energy - band structure and topological properties. ### Formulas - **Lifshitz - Onsager quantization condition**: \[ S_n=\frac{2\pi eB}{\hbar}\left(n + \frac{1}{2}-\frac{\gamma_B}{2\pi}\right) \] where $S_n$ is the extreme cross - sectional area enclosed by the $n$th LL orbit in $k$-space, $\hbar$ is the reduced Planck constant, $e$ is the electron charge, $n$ is an integer, and $\gamma_B$ is the Berry phase. - **LL orbit radius**: \[ k_\nu=\sqrt{\frac{2e\nu B}{\hbar}} \] For any dispersion relation $E(k)$, the energy of the $n$th LL changes with the power $\alpha$ of $\nu B$. - **Relationship between LL energy and magnetic field**: \[ E_\nu = E_0+\tilde{v}\sqrt{\frac{2e\hbar\nu B}{\hbar}} \] where $E_0$ is the energy at the bottom of the energy band and $\tilde{v}$ is the average velocity. Through these studies, the paper provides important experimental and theoretical bases for understanding the influence of strain on LLs in multi - valley systems.

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