Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Benjamin D. Woods,Hudaiba Soomro,E. S. Joseph,Collin C. D. Frink,Robert Joynt,M. A. Eriksson,Mark Friesen
DOI: https://doi.org/10.1038/s41534-024-00853-6
2024-06-01
Abstract:Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficult to grow, while long oscillation periods do not provide useful improvements. Here, we show that the main benefits of short-wavelength oscillations can be achieved in long-wavelength structures through a second-order coupling process involving Brillouin-zone folding induced by shear strain. We finally show that such strain can be achieved through common fabrication techniques, making this an exceptionally promising system for scalable quantum computing.
Mesoscale and Nanoscale Physics,Quantum Physics
What problem does this paper attempt to address?
The key problem that this paper attempts to solve is to enhance the valley splitting ($E_{VS}$) in Si/SiGe quantum dots in order to overcome the problem of small energy spacing between valley states in silicon - based spin qubits. Specifically, the paper proposes a new structure - Strain - assisted Wiggle Well (STRAWW), which achieves this goal by combining long - wavelength germanium concentration oscillations and shear strain. ### Problem Background 1. **Importance of Valley Splitting**: - Si/SiGe quantum dots are an attractive platform for quantum computing, but the energy spacing between their valley states is small, which can lead to leakage and affect the performance of qubits. - Enhancing valley splitting can improve the stability and operation accuracy of qubits. 2. **Limitations of Existing Methods**: - Traditional methods for enhancing valley splitting include creating atomically sharp interfaces or narrow quantum wells, but these methods are difficult to control and the effects are unstable. - Although the short - wavelength Wiggle Well (WW) can theoretically significantly enhance valley splitting, it is extremely difficult to grow, and the effect of the long - wavelength WW is not obvious. ### Proposed Solution The paper proposes an improved structure - Strain - assisted Wiggle Well (STRAWW), which combines the long - wavelength WW (about 1.7 nm) and experimentally feasible shear strain. The specific mechanisms are as follows: 1. **Role of Shear Strain**: - Shear strain will break the translational symmetry of the crystal, causing Brillouin zone folding, and thus introduce a $4\pi/a_0$ coupling in the wave vector $k_z$ direction (as shown by the green arrow in Figure 1c). - This coupling enables valley states originally in different Brillouin zones to interact with each other. 2. **Role of Long - Wavelength WW**: - The long - wavelength WW provides a second coupling path, namely the $2k_1$ coupling (as shown by the blue arrow in Figure 1c), further enhancing the coupling between valley states. 3. **Second - Order Coupling Process**: - Through the combination of the above two mechanisms, a second - order coupling process is formed, and finally effective coupling between valley states is achieved, thereby significantly enhancing valley splitting. ### Experimental Feasibility - **Realization of Strain**: Shear strain can be realized by common microelectronics manufacturing techniques, such as mechanical deformation or etching geometries. - **Preparation of Long - Wavelength WW**: Compared with the short - wavelength WW, the long - wavelength WW is easier to prepare and has been verified in the laboratory. ### Conclusion This strain - assisted Wiggle Well structure can not only significantly enhance valley splitting, but also simplify the growth of heterostructures, and has a large spin - orbit coupling, making Si - based spin qubits more suitable for large - scale quantum computing applications.