Abstract:The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest while allowing precise control of key parameters. Cold atoms trapped in optical lattices provide great flexibility and tunability [1, 2], but cannot replicate the long range Coulomb interactions and long range hopping that drive collective phenomena in real crystals. Solid state approaches support long range hopping and interactions, but previous attempts with laterally patterned semiconductor systems were not able to create tunable low disorder artificial crystals, while approaches based on Moire superlattices in twisted two-dimensional (2D) materials [3, 4] have limited tunability and control of lattice geometry. Here we demonstrate the formation of highly tunable artificial crystals by superimposing a periodic electrostatic potential on the 2D electron gas in an ultrashallow (25 nm deep) GaAs quantum well. The 100 nm period artificial crystal is identified by the formation of a new bandstructure, different from the original cubic crystal and unique to the artificial triangular lattice: transport measurements show the Hall coefficient changing sign as the chemical potential sweeps through the artificial bands. Uniquely, the artificial bandstructure can be continuously tuned from parabolic free-electron bands into linear graphene-like and flat kagome-like bands in a single device. This approach allows the formation arbitrary geometry 2D artificial crystals, opening a new route to studying collective quantum states.

Field-Tunable Valley Coupling and Localization in a Dodecagonal Semiconductor Quasicrystal

Coexistence of Pseudospin- and Valley-Hall-like Edge States in a Photonic Crystal with C3v Symmetry

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Compatibility Relationships in Van Der Waals Quasicrystals

Topological Refraction in Dual-Band Valley Sonic Crystals

Transport and Spatial Separation of Valley Coherence Via Few Layer WS2 Exciton-Polaritons

Switching of K-Q Intervalley Trions Fine Structure and Their Dynamics in N-Doped Monolayer WS2

Non-Hermitian delocalization in a 2D photonic quasicrystal

Localization and spectral structure in two-dimensional quasicrystal potentials

Colossal structural distortion and interlayer-coupling suppression in a van der Waals crystal induced by atomic vacancies

Valley phonons and exciton complexes in a monolayer semiconductor

Ultra-thin van der Waals crystals as semiconductor quantum wells

Giant Valley Coherence at Room Temperature in 3R WS 2 with Broken Inversion Symmetry

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Valley-filling instability and critical magnetic field for interaction-enhanced Zeeman response in doped WSe2 monolayers

Non-Hermitian Delocalization in a Two-Dimensional Photonic Quasicrystal.

Tuning the bandstructure of electrons in a two-dimensional artificial electrostatic crystal in GaAs quantum wells

Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures

Coexistence of quantum spin and valley hall effect in two-dimensional dielectric photonic crystals

Controlling Exciton and Valley Dynamics in Two-Dimensional Heterostructures with Atomically Precise Interlayer Proximity.