Abstract:We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of (6$\pm$1)$\times$10$^5$ cm$^{-2}$, nearly an order of magnitude improvement compared to control strain-relaxed buffers on Si wafers. The associated reduction in short-range scattering allows for a drastic improvement of the disorder properties of the two-dimensional hole gas, measured in several Ge/SiGe heterostructure field-effect transistors. We measure an average low percolation density of (1.22$\pm$0.03)$\times$10$^{10}$ cm$^{-2}$, and an average maximum mobility of (3.4$\pm$0.1)$\times$10$^{6}$ cm$^2$/Vs and quantum mobility of (8.4$\pm$0.5)$\times$10$^{4}$ cm$^2$/Vs when the hole density in the quantum well is saturated to (1.65$\pm$0.02)$\times$10$^{11}$ cm$^{-2}$. We anticipate immediate application of these heterostructures for next-generation, higher-performance Ge spin-qubits and their integration into larger quantum processors.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to grow strained quantum wells on germanium (Ge) wafers, so as to reduce the dislocation density and short - range scattering in the quantum dot array, thereby significantly improving the disorder characteristics of the two - dimensional hole gas (2DHG). Specifically: 1. **Reducing dislocation density**: The traditional method is to grow Ge - rich SiGe stress - release buffer layers (SRB) on silicon (Si) wafers, which will lead to large lattice mismatches and high - density dislocation networks. These dislocations will propagate into the quantum wells, resulting in local strain fluctuations and high short - range scattering. In this paper, the authors choose to grow SiGe SRB on Ge wafers, thereby reducing lattice mismatches and dislocation density. 2. **Improving crystal quality**: By growing SiGe SRB on Ge wafers, the crystal quality of the heterostructure can be significantly improved. The experimental results show that the dislocation density using Ge wafers is $(6 \pm 1)\times 10^{5}\, \text{cm}^{-2}$, which is one order of magnitude lower than that using Si wafers (about $(5.3 \pm 0.3)\times 10^{6}\, \text{cm}^{-2}$). This indicates that using Ge wafers can significantly reduce the propagation of dislocations, thereby providing a more uniform crystal environment. 3. **Improving the disorder characteristics of 2DHG**: Due to the reduction in dislocation density, the short - range scattering in 2DHG is also significantly reduced, making the hole mobility increase substantially. The maximum measured mobility in the experiment is $(3.4 \pm 0.1)\times 10^{6}\, \text{cm}^{2}/\text{Vs}$, much higher than that of the control sample on Si wafers. In addition, the quantum mobility has also reached $(8.4 \pm 0.5)\times 10^{4}\, \text{cm}^{2}/\text{Vs}$, showing better quantum transport performance. 4. **Application prospects**: These improvements are of great significance for the next - generation high - performance Ge spin qubits and their integration in larger - scale quantum processors. By reducing dislocations and short - range scattering, a quieter environment can be provided for the quantum dot array, thereby improving quantum coherence and operation fidelity. In summary, this paper aims to significantly improve the crystal quality and electrical properties of strained Ge quantum wells by optimizing the growth substrate (changing from Si wafers to Ge wafers), and then enhance the performance of quantum computing devices based on these heterostructures.

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