Abstract:Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at the atomic scale, typical methods rely on long-ranged capacitive interactions, making this difficult. Here we probe a silicon electronic device at the atomic scale using a localized electronic quantum dot induced directly within the device at a desired location, using the biased tip of a low-temperature scanning tunneling microscope. We demonstrate control over short-ranged tunnel coupling interactions of the quantum dot with the device's source reservoir using sub-nm position control of the tip, and the quantum dot energy level using a voltage applied to the device's gate reservoir. Despite the $\sim 1$nm proximity of the quantum dot to the metallic tip, we find the gate provides sufficient capacitance to enable a high degree of electric control. Combined with atomic scale imaging, we use the quantum dot to probe applied electric fields and charge in individual defects in the device. This capability is expected to aid in the understanding of atomic-scale devices and the quantum states realized in them.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to detect and control quantum states in silicon electronic devices at the atomic scale. Specifically, the researchers aim to induce a localized single - electron quantum dot (QD) in silicon electronic devices by using the biased tip of a low - temperature scanning tunneling microscope (LT - STM), and use this quantum dot to detect the electric field inside the device and the charge states of individual defects. ### Problem Background With the development of miniaturization of solid - state devices, their performance and functions have been greatly improved. For example, the information revolution has benefited from the continuous miniaturization of silicon complementary metal - oxide - semiconductor (CMOS) devices for decades. The miniaturization of devices also makes it possible to locate and control a single electron in a solid, which has led to new fundamental physics experiments, new current standards, and is expected to realize quantum computers and quantum simulators. However, traditional detection methods rely on long - range capacitive interactions and are difficult to achieve accurate detection at the atomic scale. ### Research Objectives This paper proposes a method that goes beyond traditional capacitive interactions, that is, by inducing a localized single - electron quantum dot at any position inside the device, and making it interact with electrons in the device not only through capacitive interactions but also through tunneling interactions. This method relies on using the biased atomic tip of a low - temperature scanning tunneling microscope (LT - STM) to electrostatically induce quantum dots with sub - nanometer precision. ### Main Contributions 1. **Induction of Single - Electron Quantum Dots**: Induce a localized single - electron quantum dot inside the device through the biased tip of LT - STM. 2. **Control of Tunneling Coupling**: Control the short - range tunneling coupling between the quantum dot and the source reservoir by moving the position of the STM tip. 3. **Detection of Electric Fields and Defect Charges**: Combine atomic - scale imaging and use the quantum dot to detect the applied electric field in the device and the charge states of individual defects. 4. **High - Precision Electrical Control**: By applying a voltage to the gate reservoir, a high - degree of electrical control of the quantum dot energy level is achieved, with a gate lever arm of about 0.08. ### Experimental Results - **Wave Function Decay Length**: The measured decay length of the quantum dot wave function is about 9 nm. - **Capacitive Coupling**: Although the quantum dot is about 1 nm away from the metal tip, the capacitance provided by the gate is sufficient to achieve high - degree electrical control. - **Defect Response**: The quantum dot energy responds to directly observed atomic - scale defects, allowing direct mapping of the defect charge states. ### Application Prospects This technology can be used to characterize or enhance the functions of atomic - scale devices. For example, the induced quantum dot can be used to achieve highly tunable superexchange interactions in a quantum simulator composed of doping atoms placed with atomic precision, or for local spin read - out. In summary, this paper solves the key problem of detecting and controlling quantum states in silicon electronic devices at the atomic scale, and provides new experimental tools for future quantum technologies and nanoelectronics.

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